| Allicdata Part #: | M29F800DT70M6-ND |
| Manufacturer Part#: |
M29F800DT70M6 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 8M PARALLEL 44SO |
| More Detail: | FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Para... |
| DataSheet: | M29F800DT70M6 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NOR |
| Memory Size: | 8Mb (1M x 8, 512K x 16) |
| Write Cycle Time - Word, Page: | 70ns |
| Access Time: | 70ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 4.5 V ~ 5.5 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 44-SOIC (0.525", 13.34mm Width) |
| Supplier Device Package: | 44-SO |
| Base Part Number: | M29F800 |
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M29F800DT70M6 Memory: Application Field and Working Principle
Memory is an essential component of a computer system; it is responsible for maintaining information which can be accessed quickly by the processor. The M29F800DT70M6 is a powerful dynamic random access memory (DRAM) developed by STMicroelectronics. This memory device consists of two main components, an array of Flash memory cells, and support circuitry. It is a highly advanced memory device, with features such as Synchronous burst operation, simultaneous read and write operations, and fast burst termination.
Application Field:
The M29F800DT70M6 is used in a wide range of applications. It is employed in many embedded systems found in products like refrigerators, washing machines and dishwashers. It is also used in automotive electronics, industrial controllers, gaming consoles and a multitude of other professional and consumer electronics. The M29F800DT70M6\'s utility is enhanced by its long endurance. It can operate under operation temperatures ranging from -40°C to 85°C while maintaining a max operating temperature of 125°C as well.
Working Principle:
The M29F800DT70M6 comprises of an array of Flash Memory cells and additional logic to control them. The Flash memory stores its information electromagnetically. It is so arranged that when electricity is applied, a separate gate connected to each memory cell will open, allowing electrons to flow into it. If a sufficient number of electrons flow into a memory cell, it is considered \'programmed\' and information which can be read by the processor is stored. To facilitate the writing of information, the logic controlling the Flash memory will first erase any information which was stored previously in the memory cell.
The M29F800DT70M6 is a successively improved memory device, it has advanced features such as synchronous burst operations, simultaneous read and write operations and fast burst termination which enhances the performance of the device. All these features coupled with its long endurance endorses the M29F800DT70M6 as an excellent choice for memory devices.
The specific data is subject to PDF, and the above content is for reference
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| M29F200FB55N3F2 TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2M PARALLEL 48TS... |
| M29F800DB70N6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 48TS... |
| M29F800DT70M6 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 44SO... |
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M29F800DT70M6 Datasheet/PDF