M29W040B90K1 Allicdata Electronics
Allicdata Part #:

M29W040B90K1-ND

Manufacturer Part#:

M29W040B90K1

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC FLASH 4M PARALLEL 32PLCC
More Detail: FLASH - NOR Memory IC 4Mb (512K x 8) Parallel 90n...
DataSheet: M29W040B90K1 datasheetM29W040B90K1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (11.35x13.89)
Base Part Number: M29W040B
Description

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The M29W040B90K1 is a high-performance, low-voltage EEPROM chip used primarily in a variety of memory applications. This pin-compatible chip is manufactured by the STMicroelectronics company and is a part of their W Series of EEPROMs. It has a higher density and is pin-compatible with the 4K M25P05 and 4K M25P10 Flash memory series.

The M29W040B90K1 is a four megabit device that can be programmed or erased byte-by-byte in a non-volatile manner. The device has four address bits, A0-A3, and sixteen data bits, D0-D15. It can operate at a current of up to 2mA and can be used in a 2.7-3.6V power supply range. The device also supports software data protection and has a 10 years data retention capability.

The M29W040B90K1 has a high speed operation – access times are typically 30ns – making it an ideal chip for multimedia, video, and other high performance memory applications. It is also suitable for general-purpose memory applications such as storing data logs, parameter files, and code programming.

The chip also offers error checking and correction (ECC), which provides reliable data storage and reduces data errors when stored in memory. The ECC feature also helps to ensure data integrity and provides protection against bit flipping due to radiation or other environmental factors.

The M29W040B90K1 utilizes two main operation modes: the read cycle and the programming/erasing cycle. During the read cycle, data is delivered from the chip onto a data bus in consecutive, word-sized read cycles. The programming and erasing cycles, on the other hand, are performed via individual byte write or erase operations. The chip is programmed or erased with supply voltage Vpp and utilizing a high or low pulse. The programming and erasing cycles are performed in a linear and non-volatile manner.

The M29W040B90K1 features UltraCorrect Write Protect, which helps to protect written data from distress, ESD, and other environmental effects. It also has built-in ECC circuitry and Self-test capabilities, which provide extensive protection against data errors.

The M29W040B90K1 is an ideal choice for use in a variety of memory applications. Its high speed operation, high density, and extensive error protection features make it an excellent choice for multimedia, video, and other high-performance memory applications.

The specific data is subject to PDF, and the above content is for reference

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