M29W400DT45ZE6E Allicdata Electronics
Allicdata Part #:

M29W400DT45ZE6E-ND

Manufacturer Part#:

M29W400DT45ZE6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 4M PARALLEL 48TFBGA
More Detail: FLASH - NOR Memory IC 4Mb (512K x 8, 256K x 16) Pa...
DataSheet: M29W400DT45ZE6E datasheetM29W400DT45ZE6E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8, 256K x 16)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x9)
Base Part Number: M29W400
Description

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Introduction of M29W400DT45ZE6E Memory

M29W400DT45ZE6E, also known as Macronix 4M x 16bit, is a high-density, high-performance, and high-reliability CMOS Synchronous Burst : Mode Flash memory. The memory features boot and code shadowing capabilities. It is capable of storing up to 4 million words of 16bit, and capable of operating with a clock frequency of a maximum of 50 MHz.

Application Field

M29W400DT45ZE6E Memory is widely used in a variety of different electronic products as it possesses superior performance and reliability. Specifically, M29W400DT45ZE6E Memory is used to store data in communication systems, such as mobile phones, laptops, MP3 players, and tablets. It is also used extensively in automotive applications, industry control, IT, robots and peripherals, image processing, gaming consoles, and various other applications.

Working Principle

The M29W400DT45ZE6E memory operates in the synchronous burst mode which means that the data you accessed is stored in the same bank, thereby reducing the turn-around time for the program and data. The memory comprises of four-bank spaces with a 16bit per word capacity. Inside each bank, there are 8 address locations that hold 256 bits of data. Data from the 8 address locations is read and stored onto the registers in the memory core.

The process of writing data to M29W400DT45ZE6E requires the data from the four banks to be loaded into the registers to which the four control signals of the device are coupled. The data is then written to the memory banks at the same time. This mode of operation is known as synchronous burst mode and enables the memory to be fast and efficient. It allows for fast data access, as well as fast data load and store operations.

Conclusion

The M29W400DT45ZE6E Memory is a high-performance and high-density CMOS Synchronous Burst : Mode Flash memory. It is widely used in many different applications, such as mobile phones, laptops, automotive applications, industry control, IT, robots and peripherals, image processing, gaming consoles, and various others. The working principle of the memory is based on the synchronous burst mode which enables fast and efficient data storage. All in all, the M29W400DT45ZE6E Memory is a powerful memory that can be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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