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Memory

The M29W128FH70ZA6E is a 128 Mb, 3.3V nonvolatile memory manufactured by STMicroelectronics. The device consists of a nonvolatile storage array made up of 16,777,216 bits organized as 131,072 words of 16 bits each. It is divided into two separately erasable blocks of 65,536 words. The size of each block is 256 Kbytes. This type of device is suitable for applications requiring high density with low power consumption.

Application Field

The M29W128FH70ZA6E is ideal for various storage applications, such as: digital control systems, computer main-memory, security systems and automotive systems. Other common usage of the device is in parameter memory, data back-up and program code storage.

The M29W128FH70ZA6E is also suitable for extending the code space of a flash or ROM application. The bits of the device can be programmed and erased individually. Once the device is programmed and erased, it can be used as program or data memory in any application.

In addition, it can be used in industrial automation systems, security systems, and data acquisition systems, as well as any application requiring a higher level of flexibility. It is also suitable for applications requiring high reliability, such as medical equipment, portable devices, and avionics.

Working Principle

The device works by using Fowler-Nordheim tunneling to inject hot carriers into the channel of a MOS transistor and thereby erasing previously programmed bits. The injected hot carriers create a “floating gate” that alters the threshold voltage of the transistor. This alteration in the threshold voltage causes the transistor to remain on or off depending on whether the threshold voltage has been raised or lowered.

The device is programmed by applying high voltage to selected memory cells, which inject electrons into the floating gate. This alters the threshold voltage of the transistor and causes it to remain on or off depending on the level of injected charge. The bits can be individually erased by applying high voltage to all of the cells.

In conclusion, the M29W128FH70ZA6E is a non-volatile memory device offering high density, low power consumption and high reliability. It is suitable for a wide range of applications requiring data storage, parameter memory and data back-up. It works by using Fowler-Nordheim tunneling to inject hot carriers into the channel of a MOS transistor and thereby erasing previously programmed bits.

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