M45PE16-VMW6G Allicdata Electronics
Allicdata Part #:

M45PE16-VMW6G-ND

Manufacturer Part#:

M45PE16-VMW6G

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 16M SPI 75MHZ 8SO
More Detail: FLASH - NOR Memory IC 16Mb (2M x 8) SPI 75MHz 8-S...
DataSheet: M45PE16-VMW6G datasheetM45PE16-VMW6G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8)
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SO W
Base Part Number: M45PE16
Description

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The M45PE16-VMW6G is a double-data rate (DDR) synchronous dynamic random access memory (SDRAM). It is an established technology with a range of applications, and its devices can be used for a variety of purposes depending on the particular characteristics of the device. The M45PE16-VMW6G is mainly used in computing and data-intensive systems for its feature set, which includes high throughput and very low power consumption.

Applications of M45PE16-VMW6G

The M45PE16-VMW6G is primarily used in computing and data-intensive systems for its feature set, which includes high throughput and very low power consumption. In particular, these features make it an ideal solution for military applications, such as radar, communications, and navigation systems. Furthermore, the M45PE16-VMW6G is popular in industrial automation and machine control systems due to its powerful hardware and its ability to read and write data at very high speeds. Other applications making great use of the M45PE16-VMW6G are point-of-sale machines, facial recognition systems, and robotics.

Working Principle

The M45PE16-VMW6G is a DDR SDRAM device, meaning it operates on a double data rate (DDR) synchronous clock. This allows for data to be read and written in two distinct phases, called a burst phase and an access phase. During the burst phase, the data is transferred at twice the clock speed. During the access phase, the device briefly pauses between clock cycles and allows the sending and receiving of data.

The M45PE16-VMW6G is organized into 16 Megabit arrays of 8-bit words. The memory can be organized into up to four banks. Each bank is divided into eight 16-bit words, and each word is accessed independently. The device has an internal write buffer to improve data throughput and it supports multiple types of interleaving, allowing for greater internal speed.

Conclusion

In conclusion, the M45PE16-VMW6G Memory is an established technology with a range of applications, from military systems and industrial automation to point of sale solutions and facial recognition technology. It operates on a double data rate synchronous clock and is organized into 16 Megabit arrays to increase data throughput. With its high throughput and low power consumption, the M45PE16-VMW6G is an ideal solution for a variety of computing and data-intensive systems.

The specific data is subject to PDF, and the above content is for reference

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