M45PE80-VMW6TG TR Integrated Circuits (ICs) |
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Allicdata Part #: | M45PE80-VMW6TGTR-ND |
Manufacturer Part#: |
M45PE80-VMW6TG TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 8M SPI 75MHZ 8SO |
More Detail: | FLASH - NOR Memory IC 8Mb (1M x 8) SPI 75MHz 8-SO |
DataSheet: | M45PE80-VMW6TG TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 8Mb (1M x 8) |
Clock Frequency: | 75MHz |
Write Cycle Time - Word, Page: | 15ms, 3ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.209", 5.30mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | M45PE80 |
Description
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M45PE80-VMW6TG TR MemoryM45PE80-VMW6TG TR is one of NAND Flash memories offered by Toshiba, belonging to the non-volatile memory (NVM) type. This type of memory is ideal for use in applications requiring high performance, reliability, and the flexibility of NAND technology.M45PE80-VMW6TG TR offers 1.8V power supply voltage and uses a single collection of eight 16MB blocks organized in an 8-bit bus. It provides a memory array of 16 Mbits, which operates at up to 20MHz while utilizing low current of 8mA. This memory is also designed to provide a data retention time of above 20 years. For improved signal integrity, this memory type has advanced signal-level control technology that optimizes signal performance.The M45PE80-VMW6TG TR memory type is best suited for digital consumer electronics, networking, appliances, IP phones, and other portable applications, such as PDAs, digital cameras, and so on. Its characteristics makes this memory type ideal for products and applications dealing with high-speed data transfer, such as audio and video data libraries, digital cameras, and PDAs. With Toshiba’s unique read-disturb and write-disturb features, which enable highly reliable and low power consumption, this memory type is also suitable for applications operating in low power environments.M45PE80-VMW6TG TR consists of two major components: a die and a package. The die contains the silicon device and the ROM account, while the package contains the TSOP package and the pins. The die is the basic component of M45PE80-VMW6TG TR, used to carry the information stored in the ROM account. The TSOP Package has 6x19 mm dimensions, and contains the pins that connect the chip to a circuit board.The working principle of M45PE80-VMW6TG TR is based on NAND Flash technology, which uses a transistor array to store and provide data. NAND Flash memory stores information in an array of memory cells consisting of MOSFETs (metal oxide semiconductor field effect transistors) connected in series. When data has to be written to the Flash memory, the current voltage of each transistor is adjusted accordingly to store the data in the memory. When data has to be retrieved from the memory, the memory structures are reversed so that each transistor’s current voltage can be read to retrieve the data stored in the memory.Overall, the M45PE80-VMW6TG TR is a reliable, high-quality memory type that offers the highest levels of performance and performance characteristics. Its characteristics makes it ideal for applications with high-speed data transfer and low power consumption. It is suitable for digital consumer electronics, networking, appliances, IP phones, and other portable applications.The specific data is subject to PDF, and the above content is for reference
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