M48Z18-100PC1

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Memory: M48Z18-100PC1 Application Field and Working Principle

The M48Z18-100PC1 is an 8-bit non-volatile static RAM (NVSRAM) with a power-down feature that reduces the power consumed by the device when not actively in use. It combines multiple functions into one single chip and can be used in a wide range of applications. This article will explore the application field and working principle of the M48Z18-100PC1.

Application Field

The M48Z18-100PC1 can be widely used in a variety of applications. It is suited for use in data security, memory protection, and devices that require frequent and rapid data access, such as electrocardiograms, X-ray machines, automatic guided vehicles, medical and industrial instrumentation, avionics, robotics, and battery-based systems.

The M48Z18-100PC1 offers an independent non-volatile storage space, with a power-down feature that allows the device to maintain the data across power cycles, even when the power supply is disconnected. Data is stored in the device’s internal storage area, which can be accessed even when the power fails.

The device features an on-chip power-down feature that reduces the power consumed by the device without affecting the data retention of the RAM. When the power is turned off, the device automatically enters into a low-power state and retains its data.

Working Principle

The M48Z18-100PC1 employs a static RAM (SRAM) array to hold data, with the addition of a low-power standby mode. SRAM is an integrated circuit technology used to store data in an electronic form. It is considered to be the fastest type of semiconductor memory, and it is used for storing both program instructions and data.

The device features an on-chip low-power standby mode, which can significantly reduce the device’s power consumption. In standby mode, the power consumption is reduced by as much as 90%, while the data remains stored in the SRAM array. The standby mode can be enabled and disabled via a control line.

The M48Z18-100PC1 features a built-in data-protection mechanism, which ensures that the data stored in the SRAM array is retained even when the power is turned off. The data is protected by two write-protection registers that are locked in hardware and cannot be changed. Additionally, the device offers EOC and OE functions for automatic memory-error correction.

The M48Z18-100PC1 also features an on-chip pre-charge circuit that reduces the time required to write to the device. The pre-charge circuitry allows the device to be written and read quickly, reducing the access time to as low as 250ns. This feature makes the M48Z18-100PC1 a high-speed memory device.

Conclusion

The M48Z18-100PC1 is a powerful, non-volatile memory device that offers a wide range of features and functions for various applications. It has the ability to store data without relying on an external power source, and the built-in low-power standby mode ensures that the device consumes minimal power when not in use. The device also features EOC and OE functions for error correction, and an on-chip pre-charge circuit for fast write and read access. The M48Z18-100PC1’s unique combination of features makes it well-suited for a variety of applications, from medical and industrial instrumentation to robotics, avionics, and automatic guided vehicles.

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