M48Z32V-35MT1F Allicdata Electronics

M48Z32V-35MT1F Integrated Circuits (ICs)

Allicdata Part #:

497-4726-2-ND

Manufacturer Part#:

M48Z32V-35MT1F

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC NVSRAM 256K PARALLEL 44SO
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: M48Z32V-35MT1F datasheetM48Z32V-35MT1F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOP (0.337", 8.56mm Width)
Supplier Device Package: 44-SO
Base Part Number: M48Z
Description

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M48Z32V-35MT1F is a nonvolatile memory device for embedded applications. This device features nonvolatile memory cells, data retention, low power consumption, and package flexibility. It is often found on motherboards for memory retention and powering embedded devices.

Application Field:

The range of uses for M48Z32V-35MT1F is broad. It is typically used for data retention during power loss. This is often used in embedded applications such as routers, modems, and other networking equipment. Additionally, it is used in industrial automation and control, automotive, portable computing, and consumer electronics applications.

Working Principle

M48Z32V-35MT1F is based on a ferroelectric random access memory (FeRAM) architecture. This device operates on the principle of two differently polarized layers of ferroelectric material which contain the data. Memory is written and read by applying an electric field to the cells in the memory array, alternately reversing (switching) the polarization of the cells so that it may be read by digital circuitry.

The nonvolatile nature of the device makes it ideal for embedded applications, as the data is retained even in the event of power loss. Additionally, the device has a low power consumption of just 25μA in normal operation and a Standby current of 5μA. This makes it suitable for low-power applications such as those in the consumer electronics market.

M48Z32V-35MT1F is also known for its flexibility in packages. It is available in a wide range of package sizes including DIP, SOP, SOIC, TSSOP, and other special packages. This makes it easy to adapt to different application requirements.

In conclusion, M48Z32V-35MT1F is a non-volatile memory device intended for embedded applications that require data retention during power outages. This device is based on a ferroelectric random access memory FeRAM architecture which is low power consuming and flexible in terms of package sizes. It is widely used in networking equipment, industrial automation and control, automotive, portable computing, and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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