M48Z35AV-10PC1 Allicdata Electronics
Allicdata Part #:

497-2882-5-ND

Manufacturer Part#:

M48Z35AV-10PC1

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC NVSRAM 256K PARALLEL 28PCDIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: M48Z35AV-10PC1 datasheetM48Z35AV-10PC1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Supplier Device Package: 28-PCDIP, CAPHAT®
Base Part Number: M48Z
Description

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M48Z35AV-10PC1 Memory Application Field and Working Principle

The M48Z35AV-10PC1 (M48) memory device is a high speed, low-power memory device that can be used in many applications. This device offers 8-bits of address and 8-bits of data RAM saving on power consumption and providing a faster memory access. It is widely used in consumer electronics, general purpose computing, embedded systems, and industrial applications.

The M48Z35AV-10PC1 memory device integrates 256K x 8-bit asynchronous SRAM and is offered in the widely used SOIC family of packages. It has a Vdd power supply range from 3.0 volts to 5.5 volts, making it suitable for various applications. Its wide temperature range from -40 ˚C to +85 ˚C makes it suitable for industrial applications. Its low-power operation (10 mA typical) saves on energy consumption and makes it suitable for battery operated applications.

M48Z35AV-10PC1 Working Principle

The M48Z35AV-10PC1 SRAM uses static CMOS technology for the cell array. Each cell contains four transistors: two p-type MOS transistors, one n-type MOS transistor, and an inverter. The cell is arranged on a 4F2 cell size and the silicon is processed with a 0.8 micron CMOS process. This device is a random access memory (RAM) so it can read or write its data in any location cycle.

The M48Z35AV-10PC1 has an automatic power down feature. When activated, it reduces the power consumption of the device to a fraction of its normal operating power. The device is put into power down mode when its CS (chip select) pin is pulled low. This feature is especially useful for battery operated applications.

The device has a built-in write protection circuitry (WP) which prevents accidental writing to the memory array. When the WP pin is in a low logic state, all write operations to the M48Z35AV-10PC1 are inhibited.

The M48Z35AV-10PC1 supports both asynchronous read and write operations. Its fast access time (25, 27 and 35 ns) allows it to access data quickly. It incorporates a three-state output buffer which allows multiple memories to share the same bus.

Conclusion

The M48Z35AV-10PC1 is a low power SRAM memory device that can be used in many applications. Its wide power supply range, wide temperature range and low power operation makes it suitable for a variety of applications. It has a fast access time and supports both asynchronous read and write operations. With a built-in write protection circuitry, it is a reliable device for industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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