Allicdata Part #: | 497-2884-5-ND |
Manufacturer Part#: |
M48Z35Y-70MH6E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | IC NVSRAM 256K PARALLEL 28SOH |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ... |
DataSheet: | M48Z35Y-70MH6E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 28-SOP (0.350", 8.89mm Width) with SNAPHAT Sockets |
Supplier Device Package: | 28-SOH |
Base Part Number: | M48Z |
Description
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Memory is a central component of computing devices, and it plays a major role in determining how fast a computer can run and store information. The M48Z35Y-70MH6E is a high-performance memory chip designed for the latest Embedded Systems, designed to provide increased speed and reliability while greatly reducing power consumption.The M48Z35Y-70MH6E is a 64Kx1 static dual bank asynchronous CMOS SRAM. The device is a non-volatile memory chip, meaning it holds data even when powered off. The static design allows for faster access and reduces power consumption, since it does not require refreshing like with dynamic RAM. The dual-bank design allows for concurrent read and write operations, and the address bus, data bus and output enable signals feature multiplexing for increased functionality and ease of use. The device delivers a fast 15nS access time, and can be used in a variety of embedded systems applications. It is suitable for use in automotives, portable medical systems, disk drive control and network routers. It can be used with microcontrollers, DSPs, and other systems that require high-speed memory. The low voltage operation of 2.0Volts makes it suitable for battery-powered applications, while maintaining speed and reliability.The device works by storing data in its memory cells, which are divided into two banks. The two banks can be independently programmed and read, allowing for concurrent operations. The device uses a multiplexed address bus to access information stored in its memory cells. When the host system sends an address to the device, it reads the contents of the memory cells and returns the data. The data is then written to the device’s output pins, which can be wired to the micro-controller or other system components. The device also features an output enable signal to allow the user to control when data is output from the device.The M48Z35Y-70MH6E is a reliable and efficient memory chip for embedded systems applications. Its dual-bank design allows for faster data retrieval and concurrent operations, and its low voltage operation makes it suitable for battery-powered applications. Its fast 15nS access time ensures that data can be accessed quickly and efficiently, setting it apart from other memory chips in its class.
The specific data is subject to PDF, and the above content is for reference
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