M50FLW080BK5TG TR

Write Cycle Time - Word, Page:	--
Base Part Number:	M50FLW080
Supplier Device Package:	32-PLCC (11.35x13.89)
Package / Case:	32-LCC (J-Lead)
Mounting Type:	Surface Mount
Operating Temperature:	-20°C ~ 85°C (TA)
Voltage - Supply:	3 V ~ 3.6 V
Memory Interface:	Parallel
Access Time:	250ns
Series:	--
Clock Frequency:	33MHz
Memory Size:	8Mb (1M x 8)
Technology:	FLASH - NOR
Memory Format:	FLASH
Memory Type:	Non-Volatile
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The M50FLW080BK5TG TR is a type of memory device which is used to store large amounts of information. It is a type of non-volatile memory, meaning that the device will not lose its contents when the power supply is removed. The device is also resistant to extreme temperatures and pressure, making it an ideal choice for many application fields and systems.The M50FLW080BK5TG TR is a Multi-Level Cell (MLC) NAND Flash memory device. This type of memory is constructed from the same basic unit – the floating gate transistor – but arranged in a different way which can allow for greater storage capacities and data rates. MLC NAND Flash memory has increasingly been used in a wide range of consumer and industrial applications, such as mobile phones, handheld computers and portable media players, as well as many industrial-level applications.The M50FLW080BK5TG TR has a maximum storage capacity of 8 Gigabits, which is sufficient for a wide range of applications. It has a maximum data transfer rate of 275 Mbit/s, which is one of the fastest in its class.The M50FLW080BK5TG TR features a dual-channel, Full-Density Multi-Level Cell (FMDLC) controller which provides improved performance and better endurance compared to other Multi-Level Cell (MLC) NAND Flash memory devices. The controller supports up to 32-bit ECC error correction, which ensures data integrity and accuracy.The device operates at supply voltage of 3.00V ~ 3.60V, with a write/erase cycle time of 100μs/50μs respectively. The device can operate for a maximum of 100,000 write/erase cycles, which is higher than most other similar memory devices.The M50FLW080BK5TG TR is a great choice in applications which require high storage capacity and high data transfer rate, such as consumer electronics, automotive systems and industrial systems. Thanks to its high endurance, this type of memory is ideal in applications which require frequent reading or writing of data as it can withstand many thousands of writes or erases without failure.In conclusion, the M50FLW080BK5TG TR is a great choice for applications with high storage capacity and fast data transfer rate. Thanks to its robust performance, this type of memory is perfect for consumer electronics and industrial systems, while its high endurance ensures reliable data operation even in the most demanding situations.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description