M50FW080K5TG TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The M50FW080K5TG writes and stores data using a multilevel cell (MLC) technology. An MLC storage device contains two bits per storage cell, allowing information density to double when compared to a single level cell (SLC) drive. Due to its higher capacity, it is usually used as a hard drive in IT industry.

The M50FW080K5TG adopts high-speed transition technologies, including dynamic permutation and correction codes (PDC), advanced command scheduling and support for high-speed boot time. The data retrieval has been significantly improved with the implementation of these technologies.

It has a wide working temperature range, making it suitable for many applications that require operation in a large temperature range. It also has a high reliability, which is attributed to its robust design, advanced internal monitoring systems, and high-grade components.

The M50FW080K5TG is also energy efficient, with power consumption as low as 4.2 watts when running in idle mode. This allows it to be used in portable devices and other applications where battery power is an important consideration.

The M50FW080K5TG is a suitable choice for many applications such as embedded and personal computing systems, applications that require high capacity and speed, and systems or devices that need to operate in extended temperature ranges.

The working principle of the M50FW080K5TG is relatively straightforward. It can store a 2-bit value in each of its memory cells, which can be written and read using a specialized control protocol. The M50FW080K5TG is powered by semiconductor drivers and devices, which regulate its communication and operating parameters.

The cell array of the M50FW080K5TG is controlled by a row decoder and column address flip-flops that are used to select a particular cell. Each cell can hold two bits, and the write and read operations are done using a sense amplifier that is placed in the cell array.

The M50FW080K5TG also implements an advanced error-correcting code (ECC) scheme to detect and correct any data errors that may occur when reading or writing the cells. This scheme may be supplemented by additional techniques to ensure reliability, such as read re-try, or redundancy schemes.

In addition, the M50FW080K5TG features a robust design, with a number of additional features that improve system reliability and reduce power consumption. These features include adaptive read current, programmable timing parameters, voltage protection and self-timing algorithms.

The M50FW080K5TG is a versatile memory solution that provides high capacity, speed and energy efficiency. It is suitable for a wide range of applications, from embedded systems, to personal computing and even enterprise applications such as video server applications.

The specific data is subject to PDF, and the above content is for reference