M50FW080K5G Allicdata Electronics
Allicdata Part #:

M50FW080K5G-ND

Manufacturer Part#:

M50FW080K5G

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 8M PARALLEL 32PLCC
More Detail: FLASH - NOR Memory IC 8Mb (1M x 8) Parallel 33MHz ...
DataSheet: M50FW080K5G datasheetM50FW080K5G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: M50FW080
Supplier Device Package: 32-PLCC (11.35x13.89)
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3 V ~ 3.6 V
Memory Interface: Parallel
Access Time: 250ns
Series: --
Clock Frequency: 33MHz
Memory Size: 8Mb (1M x 8)
Technology: FLASH - NOR
Memory Format: FLASH
Memory Type: Non-Volatile
Part Status: Obsolete
Packaging: Tube 
Description

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M50FW080K5G Application Field and Working Principle

M50FW080K5G is a memory device, often used in high-speed applications. It has a high writing speed and a low power consumption which makes it suitable for a variety of applications. It is made of a Flash ROM (Read-Only Memory) and a NAND Flash memory. It is often used in automotive infotainment systems, industrial automation, medical equipment, and other applications.

The M50FW080K5G is a two-channel Flash memory chip that reads and stores data. It has an 8-bit data bus and 8K bytes of addressable memory. It has a 3.3V single power supply and operates at a temperature range of 0℃ to 70℃. It features a Fast Programming Mode (FPM) and a low power standby mode. The FPM reduces memory programming time and is useful for quickly storing large amounts of data. The low power standby mode enables the memory to consume minimal energy when it is not actively being used.

The M50FW080K5G utilizes a NAND Flash memory with an 8 bit data bus and 8K bytes of addressable memory. NAND Flash memory is composed of blocks of memory cells, and each of these cells can store one bit of data. Each memory cell is made up of two transistors, which operate as a switch, and a diode. The transistors are connected in series, which allows electrons to flow only in one direction. The diode clamps the voltage and ensures additional protection against over voltages.

The M50FW080K5G works by using the principle of read disturb. In the read disturb method, the data stored in a cell is decoded by checking the relative conduction state of the control gate transistors. The memory chip must be activated before it can receive and process data. This is done by supplying the needed power, sufficiently adjusting the clock speed and frequency, and providing valid instructions. The instructions are then transferred to the memory cells, which depending on the type of instructions, will cause the electrons to flow through the cells creating a charge.

The M50FW080K5G is a great option for applications with high speed requirements, such as automotive infotainment systems, industrial automation, medical equipment, and other applications. Once power is supplied to the memory chip, it only takes milliseconds to read and store data, thus making it suitable for a variety of high-speed operations. Furthermore, its low power consumption makes it even more suitable, as it helps save energy while ensuring optimal performance.

The specific data is subject to PDF, and the above content is for reference

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