M50FW080N5G Allicdata Electronics
Allicdata Part #:

M50FW080N5G-ND

Manufacturer Part#:

M50FW080N5G

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 8M PARALLEL 40TSOP
More Detail: FLASH - NOR Memory IC 8Mb (1M x 8) Parallel 33MHz ...
DataSheet: M50FW080N5G datasheetM50FW080N5G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: M50FW080
Supplier Device Package: 40-TSOP (10x20)
Package / Case: 40-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3 V ~ 3.6 V
Memory Interface: Parallel
Access Time: 250ns
Series: --
Clock Frequency: 33MHz
Memory Size: 8Mb (1M x 8)
Technology: FLASH - NOR
Memory Format: FLASH
Memory Type: Non-Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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M50FW080N5G is a non-volatile flash memory memory device with a 64M-bit capacity. It uses a combination of NAND and MLC (Multi-Level Cell) technologies to achieve low cost and high speed performance. This type of memory device is often used in applications such as digital cameras, digital media players, and personal electronic devices. The M50FW080N5G can also be used in industrial and scientific applications.

In order to understand the workings of M50FW080N5G memory, it is important to first understand the basics of NAND and MLC technologies. NAND technology is a type of digital logic that stores information by programming the gate of a transistor. This type of gate array is commonly used in high performance memory devices. MLC (Multi-Level Cell) technology is a type of memory technology that stores multiple bits in a single cell. This type of technology allows for higher density storage than what is possible with single-level cell memory.

The M50FW080N5G device is composed of four different flash memory cells that have an array of eight sub-cells each. This device utilizes a NAND technology based architecture to program the transistors with data. Each cell has a row and a column that are programmed with a bit pattern. The device is then programmed to store the data in the form of the bit pattern. When the M50FW080N5G device is powered up, the data is read from the cells and reconstructed using the programming logic.

The M50FW080N5G also includes an additional layer of sophisticated error correction and data reliability features. This includes an advanced write protection mode as well as an end-to-end error correction scheme. The device is also compatible with various interfaces such as Serial Peripheral Interface (SPI), Quad Serial Peripheral Interface (QSPI) and eXtensible Interface (XI).

The M50FW080N5G memory device is typically used in applications that require high speed and high data storage throughput. Digital cameras, digital media players, and personal electronic devices typically require frequent access to large amounts of data and thus benefit from the speed of the M50FW080N5G memory device. Industrial and scientific applications may also benefit due to the increased reliability and accuracy of the memory device.

In conclusion, the M50FW080N5G memory device offers superior performance and reliability for a variety of applications. It uses a combination of NAND and MLC technologies to achieve low cost and high performance. This type of memory device is ideal for applications that require frequent access to large amounts of data, such as digital cameras, digital media players, and personal electronic devices. It also provides additional features such as advanced write protection and end-to-end error correction that make it suitable for industrial and scientific applications.

The specific data is subject to PDF, and the above content is for reference

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