M93C46-BN6

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	1Kb (128 x 8, 64 x 16)
Clock Frequency:	2MHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	SPI
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Through Hole
Package / Case:	8-DIP (0.300", 7.62mm)
Supplier Device Package:	8-PDIP
Base Part Number:	M93C46

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The M93C46-BN6, classified under Memory, is a 16K-bit, 256 × 8 bit EEPROM (electrically erasable programmable read-only memory). This type of memory allows for the retention of information in an array of memory cells that are organized into rows and columns. It is designed for applications needing a versatile and low-power memory component, such as PC BIOS and portable computers.The memory component can be erased and rewritten to, allowing for greater programming flexibility. This makes it suitable for applications requiring frequent data update and readback operations. The read access time is 15 μs max, while the write access time is 25 μs max. With a standby current of 0.5 μA, it is also relatively power-efficient and comes in a 8-pin/16-pin SOIC, 8-pin/16-pin DIP, or 8-pin/16-pin TSOP package.The M93C46-BN6 is an ISO compliant device, meeting the requirements of industrial and commercial applications. It also has a wide write voltage range from 6V to 10V and is able to tolerate input transients from 0V to +13.2V. This makes the device particularly resilient and able to withstand industrial environments.In terms of its working principle, the M93C46-BN6 is based on an array of memory cells that are organized into rows and columns. Each memory cell contains a single electron and is stored in a floating gate structure inside a CMOS (complementary metal-oxide-semiconductor) transistor. By using different bias voltages, the information can be written, erased and rewritten to the memory cells.The memory can be read by applying a Read Voltage to the memory cell. The voltage will activate the floating gate and release electrons into the substrate. This will then cause the transistor to conduct, allowing a readout of the stored data. To write data, a Write Voltage is applied to the memory cell, causing the electrons to again be released into the substrate. This data will then remain stored in the memory cell until rewritten or erased.In terms of its application field, the M93C46-BN6 is ideal for a variety of applications requiring a durable and low-power memory component. Typical applications include PC BIOS; portable computers; copiers; machine controllers; personal organizer applications; data-logging; and embedded applications. Additionally, the device is suitable for use in a wide range of digital products with high programming flexibility, including automotive, industrial, communications and consumer industries.Overall, the M93C46-BN6 is a highly versatile and low-power memory component that is suitable for a variety of applications requiring frequent data readback and update operations. It is especially suitable for industrial and commercial applications, meeting the ISO compliance requirements. Additionally, its wide write voltage range and ability to tolerate input transients make the device particularly resilient, making it ideal for use in industrial environments.­­

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