Allicdata Part #: | MAPG-002729-350L00-ND |
Manufacturer Part#: |
MAPG-002729-350L00 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | TRANSISTOR RF 350W GAN |
More Detail: | RF Mosfet 50V 500mA 2.7GHz ~ 2.9GHz 11.5dB 400W |
DataSheet: | MAPG-002729-350L00 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | -- |
Frequency: | 2.7GHz ~ 2.9GHz |
Gain: | 11.5dB |
Voltage - Test: | 50V |
Current Rating: | 10A |
Noise Figure: | -- |
Current - Test: | 500mA |
Power - Output: | 400W |
Voltage - Rated: | 55V |
Package / Case: | -- |
Supplier Device Package: | -- |
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MAPG-002729-350L00 Application Field and Working Principle
MAPG-002729-350L00 is a type of RF MOSFET transistor, which stands for Metal Oxide Semiconductor Field-Effect Transistor. Being one of an important type of active electrical devices, MOSFETs (Field Effect Transistors) are made of a semiconductor material with four layers ofAlternate N and P-type materials, in order to build the transistor, MOSFETs are useful in providing a variety of useful functions, including current and voltage amplifiers, switches, and oscillators. Generally, all FETs (Field Effect Transistors) use an “input” gate, as well as a source and a drain for current to flow in one direction. MAPG-002729-350L00 is no different in this regard, comprising of an input gate, a source, and a drain, making it a special type of MOSFET transistor.The MAPG-002729-350L00 RF MOSFET is typically used in power consolidation applications. It can be used to amplify signal amplitudes from 1 MHz to 350 MHz, making it suitable for signal consolidation. Due to its low power consumption, it is often found in audio signal amplification in computers.MAPG-002729-350L00’s features are not just restricted to power consolidation; it is also known to have a high-current handling capability, which makes it useful in RF applications as well. It also has a low on-resistance, which further improves its current handling capability.The working principle behind the MAPG-002729-350L00 MOSFET is fairly simple to understand. When an input signal is applied to the gate, it causes the potential barrier between the source and the drain to lessen, allowing the current to flow in one direction. The current flow is then amplified or attenuated according to the signal applied to the gate, thus providing the desired effect.Due to its low power consumption, high current handling capability, and wide bandwidth, the MAPG-002729-350L00 is one of the most commonly used transistors in RF applications. It is used in cellular phones, RF amplifiers, and many other applications.In conclusion, the MAPG-002729-350L00 RF MOSFET is an important type of transistor which is widely used in radio frequency and power consolidation applications. It has a simple working principle based on the potential barrier between the source and the drain, and its features such as low power consumption, high current-handling capability, and wide bandwidth make it an important tool for RF applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MAPG-002729-350L00 | M/A-Com Tech... | 0.0 $ | 1000 | TRANSISTOR RF 350W GANRF ... |
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