MAPR-002729-170M00 Allicdata Electronics
Allicdata Part #:

1465-1131-ND

Manufacturer Part#:

MAPR-002729-170M00

Price: $ 328.23
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: 170W 2.7-3.1 GHZ 100US/10%
More Detail: RF Transistor NPN 65V 27A 170W Chassis Mount
DataSheet: MAPR-002729-170M00 datasheetMAPR-002729-170M00 Datasheet/PDF
Quantity: 1000
24 +: $ 298.39500
Stock 1000Can Ship Immediately
$ 328.23
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: --
Noise Figure (dB Typ @ f): --
Gain: 9.11dB ~ 9.69dB
Power - Max: 170W
DC Current Gain (hFE) (Min) @ Ic, Vce: --
Current - Collector (Ic) (Max): 27A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: --
Supplier Device Package: --
Description

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MAPR-002729-170M00 is a type of bipolar transistor specifically designed for radio-frequency (RF) applications. It is built with double-diffused Junctions which allow higher current rates, giving users more reliability and stability.

This transistor is made up of three layers of silicon semiconductor material and, based on its collectors and emitters, it can either be NPN or PNP type. Its package type is generally in an ultra-small (SOT-323) or flat leaded chip carrier (FLC).

MAPR-002729-170M00 has performed well in RF applications such as mobile communications, cellular telephones, digital audio equipment, base stations, and more. It allows power amplifiers and oscillators to operate at frequencies as high as 2.5 GHz without any issues.

The working principle of the MAPR-002729-170M00 is the same as other bipolar transistors. It functions by controlling the amount of current that flows through its base and collector, changing the amount of current that is passed to its emitter. As the current passes between the collector and emitter, a small signal voltage is amplified.

MAPR-002729-170M00 has a high gain-bandwidth product of 17GHz, making it an ideal choice for high frequency applications. It also has a maximum collector current of 170 mA, maximum collector-emitter voltage of 10 V and a maximum power dissipation of 250 mW. The device exhibits a low noise figure of about -125 dB at 2.5 GHz.

MAPR-002729-170M00 offers a number of advantages, including its low-cost and low-power designs, high levels of integration and compatibility with many layouts, high gain, low noise figure and superior reliability.

The specific data is subject to PDF, and the above content is for reference

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