Allicdata Part #: | 1465-1133-ND |
Manufacturer Part#: |
MAPRST0912-350 |
Price: | $ 295.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | TRANS NPN 350W 960MHZ-1215MHZ |
More Detail: | RF Transistor NPN 65V 32.5A 1.215GHz 350W Chassis ... |
DataSheet: | MAPRST0912-350 Datasheet/PDF |
Quantity: | 1000 |
20 +: | $ 268.62400 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 65V |
Frequency - Transition: | 1.215GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 9.4dB |
Power - Max: | 350W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Current - Collector (Ic) (Max): | 32.5A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | -- |
Supplier Device Package: | -- |
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MAPRST0912-350 is a bipolar junction transistor (BJT) which is used in RF applications. It is a type of RF device, due to its ability to amplify and switch signals at radio frequencies. This device is also known as a “polar” because, unlike non-polar transistors, it requires DC power to function, and also responds to AC signals.
Application Fields
MAPRST0912-350 is commonly used in amplifier and switch applications. It is used for amplification in RF communication link, RF Radio networks, RF Networks, Base Stations, and digital mobile networks. It is also used in switches for Wi-Fi, GSM, Zigbee, and Bluetooth applications, due to its ability to quickly handle switching at high frequencies. In addition, it is used in Audio-frequency, Intermediate-frequency, and Low-frequency applications, where it can function as a low-noise amplifier or a modulator. Other applications of the MAPRST0912-350 bipolar junction transistor include tuning coils, antenna systems, power converters, radar systems, and automatic gain control circuits.
Working Principle
MAPRST0912-350 utilizes a three-layer junction in its operation. It is composed of two types of semiconductor layers; the first layer is composed of p-type material, and the second of n-type material. At the third layer, a junction of oppositely-doped materials is created, resulting in a diode-like structure. This junction of two different materials, known as a p-n junction, can be used to amplify or switch signals.
In operation, the junction is biased by applying a voltage which enables current flow between the p-type and n-type layers. This current flow is known as collector current, and is responsible for amplifying or switching signals. When a signal is applied to the junction, it causes the collector current to fluctuate in accordance with the input signal. The output signal is then taken from the collector of the MAPRST0912-350, which then amplifies or switches the input signal.
In addition to its application in amplifiers and switches, the MAPRST0912-350 can also be used in oscillators, due to its low power consumption and low noise figures. This device is also well suited for modulation, frequency control, impedance matching, and gain control.
Conclusion
MAPRST0912-350 is an RF device which is used for amplification and switching in a variety of applications. It is commonly used in RF communication links, RF networks, base stations, digital mobile networks, and audio, intermediate, and low-frequency applications. This device utilizes a three layer junction in its operation which enables it to amplify or switch signals. It is also used in oscillators, modulators, frequency control, impedance matching, and gain control applications.
The specific data is subject to PDF, and the above content is for reference
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