Allicdata Part #: | 1465-1134-ND |
Manufacturer Part#: |
MAPRST0912-50 |
Price: | $ 228.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | TRANS NPN 50W 960MHZ-1215MHZ |
More Detail: | RF Transistor NPN 65V 5.3A 50W Chassis Mount |
DataSheet: | MAPRST0912-50 Datasheet/PDF |
Quantity: | 1000 |
20 +: | $ 207.48200 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 65V |
Frequency - Transition: | -- |
Noise Figure (dB Typ @ f): | -- |
Gain: | 10.16dB ~ 10.25dB |
Power - Max: | 50W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Current - Collector (Ic) (Max): | 5.3A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | -- |
Supplier Device Package: | -- |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MAPRST0912-50 is a very versatile high-frequency bipolar junction transistor (BJT) device used in a variety of applications. This device is specially designed for wide-band operation in the range of 50 MHz to 500 MHz and has exceptionally low current consumption at low frequencies. It can be used in many different applications such as RF communication systems, radio transmitters, radio receivers, high-frequency power amplifiers, switching circuits, and so on. The device is also suitable for use in pulse and audio frequency applications where high-performance is required.
Application Field
MAPRST0912-50 is particularly well-suited for application to linear amplification, up to 13.5 dB of gain at 6GHz, and low noise in the 2.4GHz to 5GHz range. The device is also well-suited to switching applications offering very good off isolation at the high radio frequencies. It can be used in power amplifiers up to 25dBm of output power, in the ISM Appliance and Wireless Medical Telemetry Service (WMTS) bands. The device also has a very fast rise and fall times, suitable for high speed switching applications.
Working Principle
MAPRST0912-50 operates on the basic principle of current switching. When a small current passes through the emitter of the transistor, it causes a larger current to flow through the collector and therefore the amount of current flowing between the collector and emitter can be controlled. It works by controlling the base current. When the base current is increased, the collector current increases and vice versa. The device also has an internal compensation system that enables it to operate with minimal distortion and low harmonic content.
The device also has a wide operating temperature range from -55°C to 125°C, making it a suitable choice for applications that operate in extreme temperatures. Another advantage of this device is that it has a low-bias voltage input and is stable under a wide range of temperature, load, and supply conditions. This ensures that the device performs at a consistent level in all environmental conditions.
In addition, due to its low capacitance and good gain linearity, MAPRST0912-50 is suitable for use in high-frequency applications where low phase noise and oscillation characteristics are important. The device also exhibits excellent dynamic performance, making it a suitable choice for high-speed, high-frequency switching applications.
In conclusion, MAPRST0912-50 is an ideal choice for RF and high-frequency applications such as power amplifiers, switching circuits, and so on. It is capable of operating with low current consumption and offers excellent dynamic performance at extreme temperatures. With its wide-band operation, it is suitable for both linear and switching applications.
The specific data is subject to PDF, and the above content is for reference
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