MAPR-002731-115M00

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	65V
Frequency - Transition:	--
Noise Figure (dB Typ @ f):	--
Gain:	8.06dB ~ 8.45dB
Power - Max:	115W
DC Current Gain (hFE) (Min) @ Ic, Vce:	--
Current - Collector (Ic) (Max):	--
Operating Temperature:	200°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	--
Supplier Device Package:	--

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

MAPR-002731-115M00 is one of the most common type of bipolar junction transistors (BJT) used in radio-frequency (RF) applications. In this article, we will discuss the application field and working principle of MAPR-002731-115M00.

Application Field

MAPR-002731-115M00, with its high-power capabilities, is well suited for use in amplifiers and oscillators in the VHF and UHF frequency ranges. Due to their high gain and low noise, these transistors are also used in a variety of wireless applications such as remote control systems and wireless local-area networks (WLANs).In addition, MAPR-002731-115M00s are also used in audio circuits, where they provide excellent frequency response and distortion due to their low capacitance and low output impedance. They are often found in audio amplifiers and active filters, as well as audio-effects units and musical instruments.

Working Principle

MAPR-002731-115M00, as with many BJT devices, operates based on the principle of ‘collector-emitter currents’. This is the flow of current between the collector and the emitter when a voltage is applied to the base of the transistor.The base terminal acts as the control element of the device, allowing the collector to sink current from the emitter.When a voltage is applied to the base, the amount of current flowing from the collector to the emitter is determined by the base-emitter junction\'s resistance. This, in turn, affects the current gain (or ‘beta’) of the device.The design of MAPR-002731-115M00 also allows for a larger current gain than that of many other types of transistor, meaning it is suitable for use in high-power applications. It also has a low noise figure, meaning that it can be used in low-noise application.

Conclusion

In conclusion, MAPR-002731-115M00 is a type of bipolar junction transistor (BJT) commonly used in radio-frequency (RF) applications. It is characterized by a high current gain and low noise, making it suitable for use in high-power and low-noise applications. It is typically used in amplifiers, oscillators, wireless systems, and audio circuits. Its operation is based on the principle of ‘collector-emitter current’, with the base terminal acting as a control element.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description