Allicdata Part #: | MAX2601ESA-ND |
Manufacturer Part#: |
MAX2601ESA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Maxim Integrated |
Short Description: | IC TRANS 3.6V 1W RF PWR 8-SOIC |
More Detail: | RF Transistor NPN 15V 1.2A 1GHz 6.4W Surface Mount... |
DataSheet: | MAX2601ESA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 1GHz |
Noise Figure (dB Typ @ f): | 3.3dB @ 836MHz |
Gain: | 11.6dB |
Power - Max: | 6.4W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 250mA, 3V |
Current - Collector (Ic) (Max): | 1.2A |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Supplier Device Package: | 8-SOIC-EP |
Base Part Number: | MAX2601 |
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The MAX2601ESA is a radio frequency (RF) bipolar junction transistor (BJT) designed to be used in mobile device applications. The transistor was designed with maximum efficiency, size, and performance in mind, allowing it to be used in a variety of applications. The device is ideal for use in low-noise amplifiers (LNAs) and high-power amplifiers (HPAs).The MAX2601ESA is a high-performance, high-frequency BJT designed to operate in the Vishay-Thick Film medium frequency range of 900 MHz to 1800 MHz. The device is designed to be easy to integrate into existing circuits and make it easy to design with. The device has a wide range of power capabilities, making it suitable for a range of applications including cellular phones, wireless LANs (Wi-Fi), and numerous other RF applications. Additionally, the device offers excellent gain flatness and high isolation for signal quality improvement at low cost. The MAX2601ESA features a unique high-frequency, low-power design offering up to 86 dB of linear gain, high signal to noise performance, and low power consumption. The device uses a single amplifier block that can be configured for either an LNA or HPA by setting a switch that controls the device’s bias. This allows it to provide excellent signal fidelity and critically designed device characteristics. The high-performance transistor also offers a total harmonic distortion (THD) of 0.01%, a signal to noise ratio (SNR) of 55 dB, and a supply voltage of +2.2V to +3.6V. The device offers a wide input voltage range, allowing it to be used in various applications and provide a consistent signal response. Additionally, the device is designed to operate at a wide temperature range of -30°C to +100°C.When used in conjunction with an external circuit, the MAX2601ESA provides a robust RF signal with low distortion and high SNR. The device can operate in Linear or Class C mode, making it suitable for both high-power and low-power applications. The device also features low propagation delay making it ideal for high-speed data applications.Overall, the MAX2601ESA is a high-performance, low-cost, highly reliable BJT for use in a variety of RF applications including cellular phones, wireless LANs, and RF applications. The device is easy to use and offers excellent performance and wide temperature range. Additionally, the device offers excellent gain flatness, high isolation, low THD and high SNR.
The specific data is subject to PDF, and the above content is for reference
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