| Allicdata Part #: | MAX2602ESA-ND |
| Manufacturer Part#: |
MAX2602ESA |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Maxim Integrated |
| Short Description: | TRANS RF NPN 900MHZ 15V 8SOIC |
| More Detail: | RF Transistor NPN 15V 1.2A 1GHz 6.4W Surface Mount... |
| DataSheet: | MAX2602ESA Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Discontinued at Digi-Key |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 15V |
| Frequency - Transition: | 1GHz |
| Noise Figure (dB Typ @ f): | 3.3dB @ 836MHz |
| Gain: | 11.6dB |
| Power - Max: | 6.4W |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 250mA, 3V |
| Current - Collector (Ic) (Max): | 1.2A |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
| Supplier Device Package: | 8-SOIC-EP |
| Base Part Number: | MAX2602 |
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MAX2602ESA Application Field and Working Principle
The MAX2602ESA is a unique low power amplifier integrated circuit. It utilizes a bipolar transistor (BJT) technology to amplify radio frequencies (RF) signals. It is a perfect choice for applications that require high linearity and less power consumption.
General Features
The MAX2602ESA operates within a range of 5 volts and up to 1.8 Volt. It has the capability of increasing the gain of the RF signal up to 300 times and has a very low distortion rate. It is also capable of handling a maximum input power of 10 Watts and has an output power of up to 1 Watt. It also has a wide dynamic range that allows it to amplify signals ranging from -47 dBm to +20 dBm. Another remarkable feature of the MAX2602ESA is its low operating temperature range of 0°C to 70°C.
Applications
The MAX2602ESA is an excellent choice for amplifying low-level RF signals due to its high linearity and low distortion rate. It is used in a variety of applications such as mobile base station communications, wireless communication systems, cable TV systems, and radio broadcasting. It is also perfect for applications that require high gain and low power consumption, such as transmitter systems and receive-only systems.
Working Principle
The MAX2602ESA is based on a BJT transistor architecture. It works by using two transistors, a NPN and a PNP, to amplify the RF signal. The RF signal is split into two parts, an NPN and a PNP, which are then fed into the base of the transistor. The NPN transistor amplifies the positive section of the signal while the PNP transistor amplifies the negative section. The amplified signals are then combined and sent to the output. The MAX2602ESA also utilizes a feedback loop to optimize the amplifier’s performance.
Conclusion
The MAX2602ESA is a unique and versatile low power amplifier integrated circuit that uses a Bipolar Transistor (BJT) technology for high linearity and low power consumption. It is perfect for applications that require high gain and low distortion rate. It is used in a variety of applications such as mobile base station communications, wireless communication systems, cable TV systems, and radio broadcasting. It works by using two transistors, a NPN and a PNP, to amplify the RF signal and utilizes a feedback loop to optimize the amplifier’s performance.
The specific data is subject to PDF, and the above content is for reference
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MAX2602ESA Datasheet/PDF