MAX5062BASA-T

Current - Peak Output (Source, Sink):	2A, 2A
Base Part Number:	MAX5062
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	65ns, 65ns
High Side Voltage - Max (Bootstrap):	125V
Input Type:	Inverting, Non-Inverting
Series:	--
Logic Voltage - VIL, VIH:	--
Voltage - Supply:	8 V ~ 12.6 V
Gate Type:	N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Independent
Driven Configuration:	Half-Bridge
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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MAX5062BASA-T is an integrated gate driver module designed and supplied by MAXIM Integrated products. It is an intelligent, high-performance gate driver that provides all the necessary features to drive a wide range of power and Standard Field-Effect Transistors (FETs). As one of the essential components in the power management integrated circuit (PMIC) systems, MAX5062BASA-T finds its application fields in the telecommunications, computing, automotive, and industrial control and automation industries. MAX5062BASA-T provides a powerful, cost-efficient solution for driving high-speed MOSFETs and insulated-gate bipolar transistors (IGBTs). In addition to its application in power management ICs, the device can also be used in many other designs such as motor drivers, OR-OR inverters, and relays. This device also offers excellent dirt immunity and electrostatic discharge (ESD) protection. Additionally, it is designed to protect against shorted outputs and over-temperature conditions.The MAX5062BASA-T consists of two high-speed, high-impedance N-channel FET drivers. The main feature of this device is its dual-gate drive capability. This allows for up to two low-impedance MOSFETs to be driven simultaneously and with high speed. In addition, the device provides ESD, short-circuit over-temperature, and overload protection. The MAX5062BASA-T also incorporates a wide range of gate drive voltages from 6V to 20V. This makes it compatible with a wide variety of gate drive requirements. The device has an operating temperature range from -40°C to +85°C, making it suitable for use in a wide range of environmental applications. MAX5062BASA-T working principle is based on a charge-pump circuit control scheme. This scheme allows the gate drive voltage to be generated from an unregulated supply. This ensures that the gate drive voltage remains constant regardless of the supply voltage drift or fluctuations. It also helps to minimizes generating power losses. The gate drive waveform is regulated by pulse-width modulation (PWM) signals provided by a controller. These signals can be dampened or amplified to provide a desired level of drive strength. The PWM signal also acts as an enable signal for the gate driver. An under-voltage lockout (UVLO) circuit is also present in the device. UVLO ensures that the gate driver can only be enabled when the system power is above the pre-defined threshold. This ensures that the gate signals are not driven when the input power is insufficient. This helps to prevent any switching loops or power spikes happening in the system. MAX5062BASA-T also has two enable inputs. These inputs can be used to control the gate drive. They can be used to disable the whole device, cause the output to be clamped high, or be kept in a high impedance state. This helps to reduce current consumption and increases system efficiency. In conclusion, the MAX5062BASA-T is a powerful, cost-effective gate driver module that can be used in a wide variety of applications. It provides high-speed gate drives with various ESD, overload, and thermal protection features. The device also features a wide range of drive voltages, low-power consumption and robust operational characteristics suited for many applications in the telecommunications, computing, automotive, and industrial control and automation industries.

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