Allicdata Part #: | MBR10100CT-M3/4W-ND |
Manufacturer Part#: |
MBR10100CT-M3/4W |
Price: | $ 0.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY SCHOTTKY 100V TO220 |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 100V 5A... |
DataSheet: | MBR10100CT-M3/4W Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.39710 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io) (per Diode): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 850mV @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 100V |
Operating Temperature - Junction: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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MBR10100CT-M3/4W is a rectifier diode array consisting of four Schottky barrier diodes in a small Thermally Enhanced Molded Package (TEMPA). It is a unidirectional device that comes in a TO-220AB package. Its applications are commonly found in high-frequency switched-mode power supplies (SMPS).
Its Schottky barrier diodes feature low forward voltage drop, fast recovery time and low power losses. These diodes are ideal for data and power output applications, while their robust construction and low EMI/RFI enable them to operate in high-frequency applications.
Applications
The MBR10100CT-M3/4W has a wide range of applications, including power supplies, DC-to-DC converters, automotive electronics, telecommunication systems, and LEDs lighting control. It is commonly used in electronic circuits, particularly those dealing with high frequency and high current applications, as it offers very low on-state resistance, fast switching, and excellent protection against over-current and voltage transients.
The MBR10100CT-M3/4W is also useful for rectifying AC current and providing voltage regulation. The diode array can also be used for rectifying regulated voltage and for current limiting. It is especially useful for applications where a large input voltage range is required.
Working Principle
The working principle of the MBR10100CT-M3/4W is based on the Schottky barrier principle. A metal-semiconductor junction is formed between the semiconductor material and metal contact when the two materials are brought into contact. This junction creates an electrical barrier, known as a Schottky barrier. The barrier resists the flow of electrons and allows current to flow only in one direction – from the metal to the semiconductor. This is known as rectification.
The voltage at which the diode begins to conduct current is known as the forward voltage drop. When a high enough voltage is applied to the diode, current will start to flow through it. As the applied voltage increases, the current increases exponentially, reaching a maximum value. When the voltage is increased further, the current decreases exponentially, until it reaches a threshold, at which point the diode inhibits the further passage of current. This is known as the breakdown voltage.
The MBR10100CT-M3/4W is capable of operating at high switching frequencies and high current levels, while still providing excellent protection against voltage transients. Its low forward voltage drop ensures low power losses, while its fast recovery time ensures efficient operation in high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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