MBR120VLSFT1G

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1. Description

The device uses the Schottky barrier principle for a large area Metal-to-silicon power diodes. Very suitable for low pressure and high pressure Frequency rectification or as freewheeling and polarity protection Diodes in surface mount applications with compact size and weight Essential to the system. The package also provides easy-to-use features Can replace the lead-free 34 package style. Due to its small size, It is very suitable for portable and battery-powered products, such as Cell phones and cordless phones, chargers, laptops, printers, PDA and PCMCIA cards. Typical applications are AC-DC and DC −DC converter, battery reverse protection and multiple "OR" operations Power supply voltage and other applications with suitable performance and size Vital.

2. Features

    1. Guardring for Stress Protection

    2. Optimized for Very Low Forward Voltage

    3. 125°C Operating Junction Temperature

    4. Epoxy Meets UL 94 V−0 @ 0.125 in

    5. Package Designed for Optimal Automated Board Assembly

    6. ESD Ratings: Machine Model, C; Human Body Model, 3B

    7. NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

    8. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

3. Mechanical Characteristics

    1. Reel Options: MBR120VLSFT1G = 3,000 per 7″ reel/8 mm tape MBR120VLSFT3G = 10,000 per 13″ reel/8 mm tape

    2. Device Marking: L2V

    3. Polarity Designator: Cathode Band

    4. Weight: 11.7 mg (approximately)

    5. Case: Epoxy, Molded

    6. Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

    7. Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

    8. Device Meets MSL 1 Requirements

4. ELECTRICAL CHARACTERISTICS

5. MECHANICAL CASE OUTLINE