Allicdata Part #: | MBR1090OS-ND |
Manufacturer Part#: |
MBR1090 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 90V 10A TO220-2 |
More Detail: | Diode Schottky 90V 10A Through Hole TO-220-2 |
DataSheet: | MBR1090 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SWITCHMODE™ |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 90V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 800mV @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 90V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2 |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | MBR1090 |
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Diodes - Rectifiers - Single
The MBR1090 is an axial-lead-package Schottky barrier diode with a silicon epi-layer. This diode is designed to provide a fast switching action with low forward-voltage drop, while providing high input impedance and minimal reverse leakage currents. The low forward voltage drop of the MBR1090 is beneficial in AC/DC applications, enabling the device to minimize power dissipation. It is ideal for use with high-frequency full-wave rectification and other applications where minimal voltage drop is advantageous.
Application Field
The low forward voltage drop of the MBR1090 makes it suitable for use in many different types of applications. It can be used for full-wave rectification in high-frequency AC/DC converters, as a temperature control in LEDs, and for high-frequency switching. The MBR1090 is particularly suitable for DC/DC converters, audio amplifiers, and power switching applications. Additionally, the MBR1090 can be used to replace conventional rectifiers in certain applications.
Working Principle
The working principle of the MBR1090 is based on the Schottky barrier. The Schottky barrier is the potential barrier that is created when a metallic contact is made to a semiconductor. When a voltage is applied to the Schottky barrier, electrons flow from the metal side of the junction to the semiconductor side. This creates a low forward voltage drop and a high input impedance at the junction. The low forward voltage drop enables the MBR1090 to minimize power dissipation and increases efficiency in AC/DC applications.
At the same time, the high input impedance of the MBR1090 produces a minimal reverse leakage current. This allows the MBR1090 to be used in applications that require minimal reverse leakage. Additionally, the MBR1090 is capable of switching at very high frequencies, making it ideal for high-frequency applications.
Conclusion
The MBR1090 is an axial-lead-package Schottky barrier diode that provides a fast switching action with low forward-voltage drop, while providing high input impedance and minimal reverse leakage currents. The low forward voltage drop of the MBR1090 is beneficial in AC/DC applications, enabling the device to minimize power dissipation. Additionally, the MBR1090 has a high input impedance and the capability to switch at very high frequencies, making it ideal for DC/DC converters, audio amplifiers, and power switching applications.
The specific data is subject to PDF, and the above content is for reference
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