Allicdata Part #: | MBR16H50-E3/45-ND |
Manufacturer Part#: |
MBR16H50-E3/45 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 50V 16A TO220AC |
More Detail: | Diode Schottky 50V 16A Through Hole TO-220AC |
DataSheet: | MBR16H50-E3/45 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 16A |
Voltage - Forward (Vf) (Max) @ If: | 730mV @ 16A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -65°C ~ 175°C |
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MBR16H50-E3/45 is classified to a type of single diodes rectifier, which is called a Schottky rectifier. This article explains the application field and working principle of MBR16H50-E3/45.
Application field
MBR16H50-E3/45, with a nominal current rating of 16 A, is suitable for various kinds of applications, such as automotive systems, servers, imaging, motor drive, LED lighting, heavy appliances, and so on.
Due to its features of low power loss and low forward voltage, MBR16H50-E3/45 is commonly used in circuits where efficiency is the primary concern. It also features a high temperature operating range (up to 150℃), which makes it more suitable for automotive applications.
Working Principle
Schottky rectifiers, like MBR16H50-E3/45, are diodes that use low forward voltage drop, which leads to a higher efficiency compared with other rectifiers. This is because there is no charge stored in the depleted layer, leading to a much less power loss.
A Schottky diode is basically composed of an N-type semiconductor substrate, such as cold cathode, and a layer of rectifying metal surface. The operation involves 2 different kinds of processes. One is the forward conduction process, while the other one is the reverse conduction process.
During the forward conduction process, charge carriers (electrons and holes) move from the N-type substrate through the rectifying metal surface. This process is activated by a forward bias voltage and will cause a current spike which is essential for conduction. At the same time, a negative voltage depletion layer will be formed at the interface between the semiconductor and the rectifying metal surface.
During the reverse conduction process, charge carriers will be attracted to the depletion layer, preventing any current from flowing in reverse. This process is activated by a reverse bias voltage, forming a voltage barrier at the interface. This will help to ensure that no current from outside can enter the device.
It is important to note that MBR16H50-E3/45 is sensitive to overvoltage, so it is important to take this into account when designing the circuit. As long as the voltage remains within the specified limits, it should provide high efficiency and reliable operation.
Conclusion
In conclusion, MBR16H50-E3/45 is a single diode rectifier that excels in its low power loss and high efficiency as well as its robust temperature range. This makes it suitable for many different applications, such as automotive systems, servers, imaging, motor drive, LED lighting, and heavy appliances. Furthermore, its working principle involves two different processes of forward and reverse conduction. It is necessary to pay attention to overvoltage issues for reliable operations.
The specific data is subject to PDF, and the above content is for reference
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