| Allicdata Part #: | 1242-1009-ND |
| Manufacturer Part#: |
MBR12040CTR |
| Price: | $ 34.78 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | GeneSiC Semiconductor |
| Short Description: | DIODE MODULE 40V 120A 2TOWER |
| More Detail: | Diode Array 1 Pair Common Anode Schottky 40V 120A ... |
| DataSheet: | MBR12040CTR Datasheet/PDF |
| Quantity: | 1000 |
| 25 +: | $ 31.30750 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Configuration: | 1 Pair Common Anode |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 40V |
| Current - Average Rectified (Io) (per Diode): | 120A (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 650mV @ 120A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 3mA @ 20V |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Mounting Type: | Chassis Mount |
| Package / Case: | Twin Tower |
| Supplier Device Package: | Twin Tower |
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MBR12040CTR Application Field and Working Principle
The MBR12040CTR is a relatively new device in the rectifier array field. It is designed as an extremely fast, reliable, and cost-effective rectifying solution. The device is composed of two 40V N-channel MOSFETs and two diodes configured in a bridge arrangement. The device is suited for applications where the high switching performance, low forward voltage drop, and longer life of the rectifier application field is desired.
The MBR12040CTR is typically used as part of Power Factor Correction (PFC) circuits. The device is ideal for high current full-wave rectification with a maximum input voltage of 40V and a peak reverse voltage of up to 120V. It offers both improved efficiency and reduced EMI by providing fast switching, low voltage drop, and low-leakage currents.
In the rectifier application field, the MBR12040CTR is beneficial in multiple ways. Firstly, it offers fast switching times which can help to reduce ripple voltage and improve the efficiency of the rectifying circuit. Additionally, its low forward voltage drop helps to maximize the current through the rectifying circuit. Finally, its long life helps to reduce downtime and overall maintenance costs.
In order to understand the working principle of the MBR12040CTR, its internal structure needs to be examined. The device consists of two 40V N-channel MOSFETs connected in series, and two silicon diodes connected in parallel. The two MOSFETs form an H-bridge, and the two diodes act as rectifiers. When a voltage is applied across the MOSFETs, the two devices will switch alternately between conducting and non-conducting states, which is how the rectifying function is achieved.
The two MOSFETs also form two diodes, known as “body diodes." When the two MOSFETs are driven in opposite directions, the gate voltage of one of them causes the other MOSFET to "chromatically" turn off, thus forming a diode that can conduct current in one direction only. This diode holds the other MOSFET in the "on" state during forward conduction while blocking any reverse current.
The diodes in the MBR12040CTR have further benefits. The faster switching speeds provided by these diodes help to reduce circulating current, and also assist in achieving a faster response time. The current flow within these diodes is more consistent and stable when compared to other types of diode rectifiers, and the maximum junction temperature is lower due to the low forward voltage drop of the diodes.
The MBR12040CTR is ideal for use in a wide range of rectifier applications. Its high-speed switching capability, low voltage drop, and long life makes it well suited for use in PFC circuits, and other applications where rectification is needed. Additionally, its unique internal structure provides benefits such as reduced EMI, improved efficiency, and reduced leakage current.
The specific data is subject to PDF, and the above content is for reference
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MBR12040CTR Datasheet/PDF