Allicdata Part #: | MBR3035PTHC0G-ND |
Manufacturer Part#: |
MBR3035PTHC0G |
Price: | $ 0.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ARRAY SCHOTTKY 35V TO247AD |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 35V 30A... |
DataSheet: | MBR3035PTHC0G Datasheet/PDF |
Quantity: | 1000 |
5400 +: | $ 0.44100 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 35V |
Current - Average Rectified (Io) (per Diode): | 30A |
Voltage - Forward (Vf) (Max) @ If: | 820mV @ 30A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 35V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD (TO-3P) |
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The MBR3035PTHC0G is a device belonging to the family of diodes – rectifiers – arrays. It is an avalanche diode rectifier with a chip shunt in a PTH package intended to use in surface-mounted applications. This device provides low forward voltage drop, high current capability and high reliability.
The MBR3035PTHC0G is a 30A, 35V rectifier suitable for printed circuit board assembly used in a variety of applications. Common uses include power supplies and high frequency power converters where high forward surge current capability and positive temperature coefficient are required. The MBR3035PTHC0G also has fast recovery time characteristics to minimize power loss during operations.
The working principle of the MBR3035PTHC0G is based on a junction of strongly doped semiconductor materials where the device takes place. The silicon used in the MBR3035PTHC0G is based on its ability to undergo an avalanche breakdown when a reverse biasing voltage exceeds a certain level determined by the junction\'s physical characteristics. The device enables conduction through the diode when voltage is applied to it, this structure ensures that current mainly flows in a single direction only.
The minimum operating temperature for the MBR3035PTHC0G are 125 °C and the absolute maximum junction temperature is 175 °C. It offers fast switching with a typical recovery time of 60 to 75 ns. It also has a low leakage current (Irr), allowing for more efficient and reliable operation. The device also offers temperature compensation via its positive temperature coefficient, allowing for more constant performance over temperature variations.
The MBR3035PTHC0G is suitable for a wide range of application areas such as Appliances, automotive, consumer electronics and industrial control systems, among others. It has been designed to operate in circuits where higher voltage and current are required, but also helps to reduce power consumption due to its fast recovery time, low forward voltage drop, and the low reverse leakage current.
In conclusion, the MBR3035PTHC0G is a diode rectifier and array device belonging to the family of diodes – rectifiers – arrays. It offers a wide range of features such as high current capability, fast recovery time and low forward voltage drop. It has been designed to simplify circuit designs and applications and provides efficient power control. It is suitable for a broad range of applications, from consumer electronics to industrial control systems.
The specific data is subject to PDF, and the above content is for reference
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