MBR30H100CT-E1

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Application Field and Working Principle of MBR30H100CT-E1

MBR30H100CT-E1 is a rectifier diode array device that belongs to the portfolio of Schottky diodes from ON Semiconductor. It is designed to provide a high-speed switching solution and is suitable for use in high-frequency circuits.

Typical applications for ON Semiconductor’s MBR30H100CT-E1 diode array include: low-loss rectification in power conversion, voltage clamping, and signal switching. Its high reverse leakage current makes it suitable for applications where fast off-switching is needed, such as high-frequency synchronous rectification and switching power supplies.

Design and Construction

The MBR30H100CT-E1 diode array has 30 Schottky diodes that are constructed in an 8 PIN Gull Wing surface mount package body. The pins are on a 0.1” pitch and the package body is 0.500” x 0.500”. The body is made up of a ceramic and plastic material, which helps to dissipate the heat generated during operation and helps to improve the reliability of the device, as well as reduce contact resistance.

The 30 Schottky diodes are all reverse biased, which increases the power dissipation capability of the device.

Working Principle of MBR30H100CT-E1

The working principle of Schottky diodes is based on the contact between the metal semiconductor interface. When a voltage is applied across the Schottky diode array, the contact generates a barrier potential. The barrier potential is responsible for generating the current flow within a Schottky diode.

When a voltage is applied to the anode of the MBR30H100CT-E1 diode array, a forward-biased current flow is enabled. The current flow is then limited by the barrier potential of the Schottky diodes and is proportional to the applied voltage.

When the applied voltage is reversed, the electrons are attracted towards the cathode due to the reverse current flow. This reverse current flow is limited by the reverse leakage current of the diodes and is responsible for off-switching.

Features and Benefits

The MBR30H100CT-E1 diode array device is designed to provide high-speed switching. Other features and benefits include:

• Low on-state resistance, enabling higher efficiency power conversion
• Low reverse current leakage
• High reverse voltage
• Wide temperature range of -55°C to +150°C
• High frequency performance
• High peak power dissipation
• Excellent thermal characterstics
• High cross-talk immunity

Conclusion

The ON Semiconductor MBR30H100CT-E1 is a diode array device that is designed for use in high-frequency circuits. It has a low on-state resistance, low reverse current leakage, high reverse voltage and excellent thermal characteristics. These features make it suitable for use in power conversion, voltage clamping and signal switching applications.

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