MBR30H100MFST1G Allicdata Electronics

MBR30H100MFST1G Discrete Semiconductor Products

Allicdata Part #:

MBR30H100MFST1GOSTR-ND

Manufacturer Part#:

MBR30H100MFST1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE SCHOTTKY 100V 30A 5DFN
More Detail: Diode Schottky 100V 30A Surface Mount 5-DFN (5x6) ...
DataSheet: MBR30H100MFST1G datasheetMBR30H100MFST1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 30A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The MBR30H100MFST1G is part of the Rectifier – Single range of diodes. It is designed and manufactured to withstand a reverse voltage of up to 100V and produce a peak forward current of up to 30A and a continuous forward current of up to 3A. This diode is normally used for low voltage/high current applications, such as surge suppression, and for a wide range of other power applications.The MBR30H100MFST1G has a simple and reliable structure, consist of just one diode with a few terminals. The diode is a two-terminal semiconductor device, with the two terminals being the anode and cathode, respectively. The anode is the positive side, while the cathode is the negative side. Between the two terminals is a junction, which is formed when the two sides are connected together. The junction is the area where the diode conducts current.The MBR30H100MFST1G has a reverse voltage of up to 100V, which means that it can handle a reverse voltage of up to 100V without being damaged, and without causing a significant increase in the temperature of the junction. The current flows through the diode from the anode (the positive side) to the cathode (the negative side). The MBR30H100MFST1G is rated for a peak forward current up to 30A at a temperature of 25°C. It has a continuous forward current up to 3A.In terms of application, the MBR30H100MFST1G is suitable for several different types of power applications, including surge suppression, over-voltage protection, electronic motor starters, inrush current controls, and power supply protection. It is also used in computer power supplies, medical equipment, and other electronic equipment that requires protection against high voltage or current levels.In terms of working principle, the MBR30H100MFST1G is a diode, so it follows the basic principle of diode function. When the forward bias of the diode is applied, the diode allows current to pass through it. This is because the two sides become equal in voltage, allowing the current to pass through the junction and be conducted by the diode. When the reverse bias is applied, the diode does not allow current to pass through it because the voltage difference between the two sides is too great.In conclusion, the MBR30H100MFST1G is a diode that is part of the Rectifier – Single range of diodes. It can handle a reverse voltage of up to 100V and produces a peak forward current of up to 30A, making it ideal for low voltage/high current applications and power protection. The MBR30H100MFST1G is suitable for a wide range of power applications, and it operates by basic diode principles.

The specific data is subject to PDF, and the above content is for reference

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