MBR3050PT-E3/45 Allicdata Electronics
Allicdata Part #:

MBR3050PT-E3/45-ND

Manufacturer Part#:

MBR3050PT-E3/45

Price: $ 1.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY SCHOTTKY 50V TO3P
More Detail: Diode Array 1 Pair Common Cathode Schottky 50V 30A...
DataSheet: MBR3050PT-E3/45 datasheetMBR3050PT-E3/45 Datasheet/PDF
Quantity: 1000
750 +: $ 1.26592
Stock 1000Can Ship Immediately
$ 1.41
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 760mV @ 30A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 50V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Base Part Number: MBR3050PT
Description

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MBR3050PT-E3/45 Application Field and Working Principle

The MBR3050PT-E3/45 is an electronic component categorized as diodes, rectifiers and arrays. This diode is a rectifier diode with 15 A, 500 V rating. The reverse voltage of this component is 45 V and its breakdown voltage is 70 V. It has both forward and recovery characteristics.

This type of diode is widely used in power management applications and is suitable for both AC and DC applications. It is most commonly used in applications such as DC-DC power conversion, UPS, and solar inverters among others. It can also be used as a rectifier, voltage regulator, power supply, equipment power control and many other applications.

The MBR3050PT-E3/45 is an integrated rectifier diode array which combines into a single card four discrete rectifier diodes in aluminum can packages. Each diode has a common anode design which provides features such as low forward voltage drop, low power loss, low leakage current, high temperature operation and low noise generation. This chip is small in size and easy to mount onto a PCB.

The working principle of the MBR3050PT-E3/45 involves a semiconductor substrate which works as a semiconductor interface between the diode’s anode and cathode. The entire process involves either current flow or reverse current prevention. When forward current is applied, the diode will conduct and cause current to flow. If a reverse voltage is applied, the diode prevents the reverse current flow.

When forward current is applied, the process involves a portion of the substrate containing silicon which works as the interface between the anode and the cathode. This portion of the substrate is doped with positive ions which allows current to travel from the anode to the cathode. In the process, semiconductor electrons within the substrate are able to enter the anode and travel to the cathode, enabling the current to flow.

When a reverse voltage is applied to the component, the positive ions in the substrate become active and form a thin layer that prevents electrons from entering the anode, thus preventing any reverse current. As a result, no current is able to travel through the diode.

The MBR3050PT-E3/45 is an ideal choice for a variety of power management applications due to its wide variety of features. The component has a low forward voltage drop and low power loss so it can provide efficient power conversion. The component also has a high temperature operation and low noise generation which make it suitable for use in noisy environments. Additionally, the component is very small and can be easily mounted onto a PCB, making it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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