| Allicdata Part #: | MBR60020CTRGN-ND |
| Manufacturer Part#: |
MBR60020CTR |
| Price: | $ 56.60 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | GeneSiC Semiconductor |
| Short Description: | DIODE MODULE 20V 300A 2TOWER |
| More Detail: | Diode Array 1 Pair Common Anode Schottky 20V 300A ... |
| DataSheet: | MBR60020CTR Datasheet/PDF |
| Quantity: | 1000 |
| 25 +: | $ 50.94480 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Configuration: | 1 Pair Common Anode |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 20V |
| Current - Average Rectified (Io) (per Diode): | 300A |
| Voltage - Forward (Vf) (Max) @ If: | 750mV @ 300A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 1mA @ 20V |
| Mounting Type: | Chassis Mount |
| Package / Case: | Twin Tower |
| Supplier Device Package: | Twin Tower |
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Diodes are used in different applications due to their ability to rectify electric current. The MBR60020CTR is a rectifier diode array that is designed for applications requiring both high reverse breakdown and current capability. This component is capable to withstand a high surge current and can be safely used in applications with motor control, telecom power supplies, backlight modules, and many other industrial and consumer applications.
The MBR60020CTR is a 6A device with a 20V voltage rating. It has four series-connected 600V reverse avalanche diodes (three for the higher current capability and one for the lower current capability) in a single TO-220AB package. The component features low forward voltage with comparable on-resistance, and a reliable thermal design which allows for high current surge capability of up to 200A.
The component is suitable for high speed switching applications with reverse bias protection, fast or ultra-fast rectification in multiple circuit configurations, e.g. bridge, darlington, flyback, series, and parallel. Furthermore, the component has extremely low capacitance, making it ideal for power factor correction and DC-DC converters. The component also meets worldwide safety, EMC and RoHS standards and is available in multiple package options.
The working principle of the MBR60020CTR component is based on the rectification of alternating current using the principle of semiconductor junction. The component consists of two semiconductor layers, one p-type and one n-type, with a layer of insulation between them. When the voltage of the AC source is applied, electrons flow in one direction through the diode. This process is known as rectification and the result is a DC output, which can then be used in various applications. The forward voltage drop of the component, due to the presence of the insulation layer and the doping process, allows the flow of current only in one direction. Furthermore, the MBR60020CTR component has an extremely low forward voltage and high thermal design to handle high surge currents.
In conclusion, the MBR60020CTR is a rectifier diode array with a high surge current capability and excellent design features that make it suitable for a variety of applications. It is capable of fast or ultra-fast rectification in multiple circuit configurations and meets all safety, EMC and RoHS standards. Furthermore, the component has an extremely low forward voltage and low capacitance which makes it ideal for power factor correction and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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MBR60020CTR Datasheet/PDF