Allicdata Part #: | MBR6080PTE3/TU-ND |
Manufacturer Part#: |
MBR6080PTE3/TU |
Price: | $ 1.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE SCHOTTKY 60A 80V TO-247AD |
More Detail: | Diode |
DataSheet: | MBR6080PTE3/TU Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.98167 |
Series: | * |
Part Status: | Active |
Base Part Number: | MBR6080 |
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MBR6080PTE3/TU application field and working principle
The single diode, MBR6080PTE3/TU, is a low forward voltage drop NPT Schottky barrier diode package with a high power rating and high efficiency. It features a junction temperature of 175°C, a reverse voltage of 80V, and a forward current of up to 6A. The MBR6080PTE3/TU is ideal for a wide range of applications.
Application Fields
The MBR6080PTE3/TU is widely used in low-power switching mode power supplies, secondary power distribution and port power supplies. Its high efficiency allows it to improve the total efficiency of the entire power supply system. It can also be used in freewheeling and signal clamping circuits.
Working Principle
The MBR6080PTE3/TU is a low forward voltage drop diode with a Schottky barrier rectifier structure. Its diode junction is preceded by a Schottky barrier layer that forms a highly rectifying and low voltage-drop rectifier junction. Its low forward voltage and high temperature can help to efficiently dissipate the power dissipated by power supply components and reduce energy loss.
The MBR6080PTE3/TU is designed with a low capacitance, which helps improve conduction efficiency, while its low reverse current ensures low power loss. The diode can withstand up to 80V in reverse bias conditions, enabling it to be used in a wide range of applications.
Advantages & Disadvantages
The MBR6080PTE3/TU diode offers several advantages compared to other types of diodes. Its low capacitance improves conduction efficiency, its low forward voltage helps to reduce energy loss, and its high temperature allows for improved component power dissipation. The diode also features a high reverse voltage rating, enabling it to be used in a wide range of applications.
The MBR6080PTE3/TU diode also has several drawbacks. Its low reverse current means that it may not be suitable for large current pulses, and its high temperature limits its operation temperature range. In addition, its forward current rating is limited to 6A, making it unsuitable for high-powered applications.
Conclusion
The single diode MBR6080PTE3/TU is a low forward voltage drop NPT Schottky barrier diode package with a high power rating and high efficiency. It is ideal for low-power switching mode power supplies, secondary power distribution, port power supplies and a wide range of other applications. Its low capacitance, low forward voltage and high temperature help improve component efficiency and reduce energy losses. Its high reverse voltage rating enables it to be used in high voltage applications. However, its low reverse current and high temperature limits its operation temperature range, and its forward current rating of 6A makes it unsuitable for high-powered applications.
The specific data is subject to PDF, and the above content is for reference
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