MBR6045PTHC0G Allicdata Electronics
Allicdata Part #:

MBR6045PTHC0G-ND

Manufacturer Part#:

MBR6045PTHC0G

Price: $ 0.83
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ARRAY SCHOTTKY 45V TO247AD
More Detail: Diode Array 1 Pair Common Cathode Schottky 45V 60A...
DataSheet: MBR6045PTHC0G datasheetMBR6045PTHC0G Datasheet/PDF
Quantity: 1000
5400 +: $ 0.74970
Stock 1000Can Ship Immediately
$ 0.83
Specifications
Series: Automotive, AEC-Q101
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 820mV @ 60A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 45V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (TO-3P)
Description

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Introduction:

The MBR6045PTHC0G is a silicon-controlled rectifier (SCR) array which contains four independent thyristors and is designed for use in harsh environmental conditions such as temperature, pressure, and humidity. The MBR6045PTHC0G is suitable for a variety of applications including AC motor control, AC motor speed control, process control, and heat control.

Application Field

The MBR6045PTHC0G is designed for use in a wide range of applications. It is suitable for AC motor control, AC motor speed control, process control, and heat control. The SCR array can also be used for phase control and phase angle control in induction motors, as well as in multiplex current sensing switch applications. The device is also suitable for applications where high operating temperature and high static voltage are needed such as in power supplies and in power converters. Furthermore, the SCR array can be used in the control of resistive and capacitive loads, particularly in industrial and domestic power supplies.

Working Principle

The MBR6045PTHC0G operates according to the principle of a silicon-controlled rectifier (SCR). An SCR is a four-layer semiconductor device composed of P-type and N-type silicon elements. These elements can be biased in either forward or reverse directions. When a positive voltage is applied to the P-type material and negative voltage to the N-type material, then the SCR will be forward biased and allows current to flow. The reverse bias mode of operation prevents any current from flowing.

The MBR6045PTHC0G is composed of four independent thyristors arranged in a single package. Each thyristor has three terminals: an anode, a gate, and a cathode. The gate terminal is used to control the voltage applied to the terminals and the current allowed to flow through the device. The device operates according to the principle of a silicon-controlled rectifier (SCR). When the gate is positively biased, the thyristor is forward biased and current can flow through the device. The reverse bias mode prevents any current from flowing through the device.

Conclusion

The MBR6045PTHC0G is a silicon-controlled rectifier array designed for use in harsh environmental conditions. It is suitable for a variety of applications including AC motor control, AC motor speed control, process control, and heat control. The device operates according to the principle of a silicon-controlled rectifier (SCR) which is composed of four independent thyristors arranged in a single package. Each thyristor can be biased in either forward or reverse directions to control the voltage applied to the terminals and the current allowed to flow through the device.

The specific data is subject to PDF, and the above content is for reference

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