Allicdata Part #: | MBRT12020RGN-ND |
Manufacturer Part#: |
MBRT12020R |
Price: | $ 28.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE MODULE 20V 120A 3TOWER |
More Detail: | Diode Array 1 Pair Common Anode Schottky 20V 120A ... |
DataSheet: | MBRT12020R Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 25.90970 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Anode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 20V |
Current - Average Rectified (Io) (per Diode): | 120A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 750mV @ 60A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 20V |
Mounting Type: | Chassis Mount |
Package / Case: | Three Tower |
Supplier Device Package: | Three Tower |
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For those interested in circuit boards and electrical engineering, the MBRT12020R diode is a critical component to consider. As part of the diodes-rectifiers-arrays family, this diode boasts a variety of useful applications and principles.
Firstly, diodes are critical electrical components that control the flow of current through a circuit. The MBRT12020R is a doubly-diffused MOSFET (metal oxide semiconductor field-effect transistor) diode, designed to be used in fast switching applications with its ultra-low on-resistance. The diode is available with 600V rated voltage, a maximum repetitive reverse voltage of 120V, and an aggressive 10µA leakage current.
Moreover, the structure of the component allows for a double isolation construction, which protects the component from potential damage. The MOSFET diode has decreased series resistance and a more efficient body diode than ordinary power elements. Additionally, the component is also small and has a low profile, meaning that it takes up minimal space and can be integrated into many board designs.
In terms of application, the MBRT12020R is primarily used in fast and low power switching applications such as DC-DC converters, HID ballast, and lighting applications. The component is also frequently used in high side and low side gate drivers. Additionally, this component is RoHS compliant, being free of hazardous materials and compliant with various international safety standards.
Finally, the component also operates based on several key principles. Firstly, the component has a reverse polarity, coupled to the drain and source terminals which help conduct forward current, but prevent reverse current from flowing. Thus, when the diode’s anode is at a more positive potential than its cathode, current does not flow, and thus it is said to be “reverse biased”. On the other hand, when the anode is at a lesser positive potential than its cathode, the diode is said to be “forward biased”, and current flows through the device. This is largely controlled by the voltage drop between anode and cathode.
Furthermore, the diode is also made of N-type semiconductor material, meaning that it contains carriers of electrons which flow from the source terminal to the drain. In other words, the diode acts as a one-way valve because of its varying semiconductor material, allowing it to control the direction of the current flow.
In sum, the MBRT12020R diode is a unique component belonging to the family of diodes-rectifiers-arrays. It is a doubly-diffused MOSFET diode with a low on-resistance, a double isolation construction, and a small profile - making it suitable for fast switching applications such as DC-DC converters, HID ballast, lighting applications, and high side/low side gate drivers. Additionally, the component is RoHS compliant and is operated by principles of reverse polarity and N-type semiconductor material.
The specific data is subject to PDF, and the above content is for reference
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