MBRTA60030R Allicdata Electronics
Allicdata Part #:

MBRTA60030R-ND

Manufacturer Part#:

MBRTA60030R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: GeneSiC Semiconductor
Short Description: DIODE SCHOTTKY 30V 300A 3TOWER
More Detail: Diode Array 1 Pair Common Anode Schottky 30V 300A ...
DataSheet: MBRTA60030R datasheetMBRTA60030R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 30V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Description

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Diodes are one of the simplest electronic components that are used for rectifying and amplifying electronic signals. Diodes can be arranged in arrays that perform various functions, such as rectifying alternating current (AC) to direct current (DC), rectifying DC to AC, or amplifying signals. The MBRTA60030R is an example of a diode array manufactured by Panasonic that is used in a variety of applications. In this article, we will discuss the application field and working principle of the MBRTA60030R.

The MBRTA60030R is a three-phase, six-rectifying diode array designed for high-reliability applications such as solar, alternative energy and industrial markets. It has low on-state voltage drop, low noise emission and high thermal shock resistance. The diode array features a peak forward blocking voltage of 600V and a continuous forward blocking voltage of 300V.

The MBRTA60030R is typically used for rectifying AC to DC in a variety of applications including solar cell and inverter circuits. The device is also used for rectifying DC to AC in applications such as DC-DC converters and home UPS systems. In addition, the MBRTA60030R is used for signal amplification in switching mode power supplies.

The working principle of the MBRTA60030R is based on PN (positive-negative) junction. In a PN junction, a semiconductor material such as silicon is doped with an impurity such as boron to create a region of higher proportion of negative charge carriers. When a positive potential is applied to one side of the PN junction, it creates a voltage difference across the junction which allows for current flow. The MBRTA60030R consists of three PN junctions arranged in a three-phase configuration. This configuration allows for efficient rectification and signal amplification.

The MBRTA60030R provides efficient rectification and signal amplification in a variety of applications due to its three-phase, six-rectifying diode array design. The device has a low on-state voltage drop, low noise emission and high thermal shock resistance. In addition, the device operates on the basis of PN junction which allows for efficient rectification and signal amplification. This makes the MBRTA60030R a highly reliable and versatile component for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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