MBRTA40035L Allicdata Electronics
Allicdata Part #:

MBRTA40035L-ND

Manufacturer Part#:

MBRTA40035L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: GeneSiC Semiconductor
Short Description: DIODE SCHOTTKY 35V 200A 3TOWER
More Detail: Diode Array 1 Pair Common Cathode Schottky 35V 200...
DataSheet: MBRTA40035L datasheetMBRTA40035L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Description

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The MBRTA40035L device is a rectifier array integrated circuit consisting of four individually addressable elements in a common package, with a total power dissipation of 600W. The device is offered in two standard applications: General Semiconductor and Power Semiconductor.

The General Semiconductor application is used to protect sensitive electronic components from high voltage transients and to control the power of electro-mechanical oscillator circuits. It features fast switching times, a high peak current rating and a low forward voltage drop for effective protection of sensitive components.

The Power Semiconductor application is used to control the power of large motor and generator applications. It offers fast switching times, a high current rating and a low forward voltage drop for efficient operation. The device has been designed to be easy to mount in a variety of stackable or expandable power systems.

The MBRTA40035L rectifier array has a wide range of uses that may include household appliances, cell phone chargers, computer systems, industrial machinery, and medical devices. With its low forward voltage drop and high current rating, it offers superior performance to more conventional diode and transistor arrays.

In terms of its general working principle, the MBRTA40035L rectifier array is based on the properties of the P-N junction diode. The anode and cathode of the diode are used to form a semiconductor junction that allows current to flow on one side (the anode) while blocking current from flowing on the other side (the cathode). The resistance of the diode can also be adjusted to facilitate changing current flow in the two directions.

The arrray effectively contains four monolithic die, each of which consists of 15 staggered branches in an array. Each diode has an internal connection between its anode and cathode and is connected to the other three diodes in the array. Each of the four diodes in the array has its own breakdown voltage, which is adjustable. This allows the device to be used in wide variety of applications.

The MBRTA40035L rectifier array is an ideal choice for applications requiring high current, high speed, and low voltage drop. It offers superior performance to conventional diode and transistor arrays, as well as offering superior energy efficiency due to its low forward voltage drop. The device is also easy to mount in a variety of stackable or expandable power systems.

In summary, the MBRTA40035L rectifier array is a high speed and high current rectifier array from General Semiconductor and Power Semiconductor. This device is ideal for applications requiring low voltage drop and a high current rating as well as for controlling the power of large motor and generator applications. It can also be used in a variety of stackable or expandable power systems, making it a versatile and cost-effective solution for many applications.

The specific data is subject to PDF, and the above content is for reference

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