MBRT20030R Allicdata Electronics
Allicdata Part #:

MBRT20030RGN-ND

Manufacturer Part#:

MBRT20030R

Price: $ 32.63
Product Category:

Discrete Semiconductor Products

Manufacturer: GeneSiC Semiconductor
Short Description: DIODE MODULE 30V 200A 3TOWER
More Detail: Diode Array 1 Pair Common Anode Schottky 30V 200A ...
DataSheet: MBRT20030R datasheetMBRT20030R Datasheet/PDF
Quantity: 1000
25 +: $ 29.36430
Stock 1000Can Ship Immediately
$ 32.63
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Description

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MBRT20030R Application Field and Working Principle

Diodes are commonly used as energetic components in electrical circuits, and diode arrays are devices made up of two or more integrated diodes. MBRT20030R is one of these diode arrays and its application fields, working environment and working principles are discussed in this article.

Application Field

MBRT20030R diodes are particularly suitable for applications that require high-speed rectification, such as on-board inverters and resonant converters. They can also be employed for general purpose rectification requiring high speed switching and surge capability, applications such as power factor correction, or high frequency switched mode power supplies.

Working Environment

When operated at junction temperatures of up to 175°C, the MBRT20030R optimizes avalanche energy performance and switching characteristics. It requires a forward current of no more than 30A, and a surge current of as much as 60A. Its max drain–source voltage is 600V and max power dissipation is 75 W.

Working Principle

The working principle of the MBRT20030R is based on the principles of the P-N junction. This means that the diode array is formed by two P-type and N-type semiconductor materials that are connected together. When a voltage is applied, only one type of current, determining the direction of the device, can flow through it and the other is blocked. This nature of the diode allows it to be used for specific purposes, such as rectification, and for other applications involving high speed switching. The MBRT20030R is a fast switching device and can therefore provide a high level of protection from voltage surges.

Conclusion

In conclusion, the MBRT20030R is a rectifier diode array that is ideal for high speed rectification applications. Its fast switching capability allows it to provide protection from voltage surges, and its in-built junction temperature of up to 175°C optimizes its avalanche energy performance and switching characteristics. Its wide range of application fields and P-N junction structure make it a popular choice in rectification applications.

The specific data is subject to PDF, and the above content is for reference

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