Allicdata Part #: | MBRTA60035L-ND |
Manufacturer Part#: |
MBRTA60035L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE SCHOTTKY 35V 300A 3TOWER |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 35V 300... |
DataSheet: | MBRTA60035L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 35V |
Current - Average Rectified (Io) (per Diode): | 300A |
Voltage - Forward (Vf) (Max) @ If: | 600mV @ 300A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 3mA @ 35V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Three Tower |
Supplier Device Package: | Three Tower |
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Diodes array is a discrete semiconductor device which consists of multiple semiconductor layers connected together. It is used to control the voltage and current flow in a circuit, and is the basic unit of many digital circuits. The MBRTA60035L array is a type of rectifier array diodes, which is specially designed for RF applications.
The MBRTA60035L consists of 36 silicon rectifier diodes connected in a diode bridge array. Each diode in the array has a reverse voltage rating of 600V and a forward current rating of 35A. The MBRTA60035L array is manufactured in surface mount and through-hole packages and is housed in a plastic envelope. The plastic envelope is RoHS compatible and is safe for environmental disposal.
The MBRTA60035L is used in various applications such as: radio frequency (RF) power supplies, DC voltage conversions, and RF signal amplifiers. It also has various configurations, such as parallel and series, that allow it to be used in different applications. The array offers high surge current capability, low noise, and fast switching. The device is capable of delivering high power with excellent stability and reliability.
The working principle of the MBRTA60035L is relatively simple. When the input power is applied, each diode in the array starts to conduct, allowing the current to flow in the forward direction. The voltage of the diode decreases in the forward direction until it reaches a level equal to the input voltage. When this occurs, the diode is said to be in forward-biased “on” state and all the diodes in the array are switched on simultaneously. This allows the current to flow in the forward direction, resulting in a DC output voltage.
The MBRTA60035L continues to operate in the “on” state until the forward current flowing through the diode falls below a certain value. At this point, the device is said to be in the “off” state, and the current in the circuit is reversed. The array works in this manner, alternately switching between the “on” and “off” states, controlling the current flow in the circuit and converting AC power to DC.
In conclusion, the MBRTA60035L is a rectifier array diode designed for RF applications. Its high surge current capability, low noise, and fast switching make it a great choice for many applications. The working principle is simple, and the array alternately switches between the “on” and “off” states to control the current flow. This ensures reliable and efficient power conversion.
The specific data is subject to PDF, and the above content is for reference
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MBRT40080 | GeneSiC Semi... | 39.59 $ | 1000 | DIODE MODULE 80V 400A 3TO... |
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MBRT30060R | GeneSiC Semi... | 42.74 $ | 1000 | DIODE MODULE 60V 300A 3TO... |
MBRT30080 | GeneSiC Semi... | 42.74 $ | 1000 | DIODE MODULE 80V 300A 3TO... |
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