MBRTA80045 Allicdata Electronics
Allicdata Part #:

MBRTA80045-ND

Manufacturer Part#:

MBRTA80045

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: GeneSiC Semiconductor
Short Description: DIODE SCHOTTKY 45V 400A 3TOWER
More Detail: Diode Array 1 Pair Common Cathode Schottky 45V 400...
DataSheet: MBRTA80045 datasheetMBRTA80045 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 400A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 45V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Description

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Diodes - Rectifiers - Arrays

The MBRTA80045 is a three-phase rectifier array module that provides a low cost solution for medium power applications. It is a predefined, off-the-shelf integrated circuit which is especially appropriate for a wide range of power conversion applications. It is design to provide a high degree of safety in industrial and automotive applications.

The MBRTA80045 is optimized for applications such as battery charging, drives, welders and pulsed loads, where constant external resistances are used to control the output current. It utilizes an integrated FET power stage and an embedded active clamp comprising four MOSFETs. This clamp provides a low voltage drop solution with low power dissipation and allows designers to shrink the external components size and decrease thermal stress.

The MBRTA80045 is designed to meet the latest Automotive Electronics Council (AEC) Linear Output Level green standard, and is qualified to the AECQ100 automotive requirements. It has a compact TO-220 package that is thermally isolated from the top surface and can be mounted directly to the die cast heatsink without an insulator. The device has an integrated thermal protection circuit which is design to reduce power dissipation by using an on-chip thermal sensor.

The working principle of the MBRTA80045 is simple yet efficient. It does not require any external bias and can be driven directly from the gate drive signal. The power stage of the device is composed of three half-bridges with independent gate control. Each gate’s gate-source voltage is driven from a different frequency signal and the junction between the gate and source is driven from the source signal. This arrangement allows the MBRTA80045 to take advantage of a much higher Algorithm, with a much faster Response Time and a better set of features.

The MBRTA80045 is designed to meet the requirements of harsh automotive environments. It features a short-circuit protection and an over-temperature protection that shuts down the power stage and monitors the temperature of each power MOSFET. It also offers a high-voltage snubber circuit which protects the device from transient voltages that may occur due to high levels of inductance or capacitance in the load. Furthermore, the device can be operated from a wide range of input voltages, from 0 to 60 volts, making it suitable for a wide range of applications.

The MBRTA80045 is a reliable, versatile and cost effective solution for high power applications. It has been specifically designed to provide designers with a cost effective and reliable platform for applications in automotive, consumer, industrial and general electronics. With its high efficiency and performance, it is an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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