MC33152VDR2G Integrated Circuits (ICs)

Logic Voltage - VIL, VIH:	0.8V, 2.6V
Base Part Number:	MC33152
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	36ns, 32ns
Input Type:	Non-Inverting
Current - Peak Output (Source, Sink):	1.5A, 1.5A
Series:	--
Voltage - Supply:	6.1 V ~ 18 V
Gate Type:	N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Independent
Driven Configuration:	Low-Side
Part Status:	Active
Packaging:	Tape & Reel (TR)

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MC33152VDR2G Application Field and Working PrincipleMC33152VDR2G belongs to a family of gate drivers that are part of the expanding portfolio of Power Management IC (PMIC) products, enabling cost-sensitive designs. This device is particularly well-suited for high-side/low-side driver and ground-referenced applications, as it combines a low on-resistance high- and low-side driver with a charge pump. The applications of MC33152VDR2G include DC/DC (step-down and step-up configurations), current-limited switches, motor drives, power switching and half-bridge configurations; all of which can utilize the low on-resistance, wide voltage range, high slew rate capabilities and current-limiting features. This device is supplied with a minimum of external components and may be operated in several different configurations, making it ideal for use in space-limited applications. Its integrated low-side gate driver also simplifies the driving of bipolar power devices compared to shunt resistor-based reference designs. In half-bridge topology, MC33152VDR2G supports both half-bridge topology and full-bridge topology, such as high-side N-channel dual high-side configurations. It also provides a linear output current limit for the high-side driver output, making it suitable for applications such as motor drives and Class-D amplifiers. Speaking of the working principle, MC33152VDR2G is based on a pair of NPN/PNP voltage/current limited drivers integrated in a single package. These drivers are switched on/off via two control inputs that are automatically clamped to ground and VDD when the respective high-or low-side transistor is being switched. Also, when the high-side or low-side device is being switched, the pulse will be clamped to the source voltage of the respective transistor, thus eliminating the need for an external clamping arrangement. This helps to reduce the stress on the output devices and hence the power loss associated with the switching.Moreover, the device features a dual charge pump and an optically coupled output. The charge pump helps to generate the high-voltage gate drive signals required to switch the high-side device. The optically coupled output, meanwhile, provides the flexibility to drive an external device logic, such as a power monitor circuit. Finally, MC33152VDR2G utilizes a shutdown feature which allows it to enter a low-power power-down mode when the supported device is not required. This feature helps to conserve power and reduce heat dissipation. In conclusion, MC33152VDR2G is a versatile, low-power integrated gate driver solution with a wide range of applications and features. It provides an economical, reliable and robust solution for driving MOSFETs, IGBTs and other power devices in a variety of motor drive and power switching applications.

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