MC33285D

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MC33285D is a monolithic gate driver integrated circuit that was designed to provide a high level of integration and minimise the number of external components in medium-voltage power factor correction application designs. This integrated circuit integrates two independent gate drivers, with one driver designed for low-side applications and the other for high-side applications. It is packaged in a small footprint, 24-pin QFN package and operates from a single supply voltage up to +20V. The MC33285D is capable of driving MOSFETs with on-resistances of 10 ohms up to 2k ohms in standard and high voltage applications. The integrated circuit also provides a proprietary feature called the “Smart-FET” mode, which can be used to control the current flowing through the MOSFETs in order to reduce power dissipation and increase circuit efficiency and accuracy.

The MC33285D is a part of the power management integrated circuits (PMIC) category of gate drivers. Its primary purpose is to provide the necessary gate voltage drive voltage to the MOSFETs and it is capable of driving MOSFETs with on-resistances of 10 ohms to 2k ohms at standard and high voltage levels. It provides protection against various output parameters such as overvoltage, undervoltage, overcurrent, and thermal protection. The MC33285D is also designed to reduce EMI and power dissipation. The circuit incorporates an innovative Smart-FET mode, which can be used to control the current flowing through the MOSFETs for greater efficiency and accuracy.

The MC33285D is designed with a highly integrated and flexible architecture. It incorporates a low-side gate driver, a high-side gate driver, and a common logic, supply and control circuitry. The low-side gate driver is responsible for driving the MOSFETs with a nominal source-drain voltage of up to +20V. The high-side gate driver is responsible for driving the MOSFETs with a nominal drain-source voltage of up to +20V. The common logic, supply and control circuits provide control and monitoring for the MOSFETs, as well as protection against various output parameters. All of these components are integrated on a single chip for superior performance and reduced cost.

The MC33285D is designed to ensure reliable gate drive performance for a wide variety of power factor correction and power supply applications. It is capable of driving MOSFETs with on-resistances of 10 ohms up to 2k ohms in both standard and high voltage applications. The integrated Smart-FET mode feature also provides additional control and accuracy. This integrated circuit also provides various protection features such as overvoltage, undervoltage, overcurrent, and thermal protection.

The MC33285D is an ideal choice for applications such as power factor correction, power supply design, power converters, DC-DC converters, and other power applications. It is a highly integrated and cost-effective solution that provides superior gate drive performance with reduced external component count. The Smart-FET mode provides additional features such as current control and protection for improved efficiency and accuracy.

The specific data is subject to PDF, and the above content is for reference