MCCD2005-TP

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual) Common Drain
FET Feature:	Standard
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	8A
Rds On (Max) @ Id, Vgs:	13 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	17.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	1800pF @ 10V
Power - Max:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-WFDFN Exposed Pad
Supplier Device Package:	DFN2030-6

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MCCD2005-TP Application Field and Working Principle

MCCD2005-TP is the abbreviation of “Metallic Contact CHannelFET with Dual-Gate Structure”. It is a type of transistor array specifically designed for high-density integrated circuit applications. The device has a special configuration of two-solder termination contacts, as well as two separate gate terminals for total gate control. As with all FETs, the MCCD2005-TP utilizes the field effect to change the resistance of the channel between the source and the drain. In the MCCD2005-TP the two gate terminals are interconnected, allowing for better gate control. Due to the two solder termination contacts and two gate terminals, the device is both more space-efficient and cost-effective compared to other FETs such as MOSFETs and JFETs. Furthermore, the device is highly reliable and offers excellent electrical characteristics such as low threshold voltage and high current carrying capacity. These advantages make it particularly suitable for high-density, low power consumption integrated circuits.In terms of the device’s working principle, when the gate voltage is higher than the threshold voltage, current will flow between the source and the drain. At this point, the resistance of the channel is reduced, resulting in increased current flow. As the gate voltage decreases, the resistance of the channel increases and current flow is decreased. Therefore, by varying the gate voltage, the current flow can be controlled. The device also has a so-called “zero gate current” feature, which means that the gate current is zero when the gate voltage is equal to the threshold voltage. This means that the device can be used for applications that require low power consumption, since the gate voltage can be kept at the threshold voltage, thus preventing current from flowing through the gate.The MCCD2005-TP has a wide range of applications for high-density integrated circuits, including: power management, signal processing, audio circuits, digital-to-analog converters (DACs), and low-noise amplifiers.In summary, the MCCD2005-TP is an advanced, reliable, and cost-effective FET array suitable for high-density integrated circuits. It uses the field effect to control current flow, and has a zero gate current feature that allows for reduced power consumption. Its wide range of applications make it suitable for various types of systems and circuits.

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