MCCD2007-TP

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MCCD2007-TP is an advanced Field-Effect Transistor (FET) array based on a technology called metal-composite channel depletion (MCD) mode. The technology combines the advantages of the conventional and enhanced MOSFET technologies, such as low power, high speed and high mobility, to provide a cutting edge solution for the power and logic applications. This article provides an in-depth look at the application fields and working principles of the MCCD2007-TP.

Application Fields

The MCCD2007-TP provides an attractive solution for power and logic applications, such as Voltage Mode Logic (VML), Power Amplification, High Speed Switching, and Low-Voltage/Low-Power design. For example, it can be used in Voltage Mode Logic applications by providing high speed switching, excellent output performance, and lower power consumption compared to conventional VML. It is also used for power amplification due to its high gain and optimized strength-current scaling. Furthermore, the MCCD2007-TP offers high mobility for design of high speed switching, as well as low-voltage/low-power designs.

Working Principle:

The MCD technology of the MCCD2007-TP utilizes a field-plated, metal-composite channel structure that has low on resistance and self-protected gate oxide. The gate oxide is created by the MCD stack, while the gate oxide is made self-protected by the high electric field that is generated by the metal-composite channel structure. This prevents any short- or long-term damage to the structure. The gate oxide is further isolated from the substrate by an isolator. The combination of the MCD stack and the isolated gate allows for a reduced gate-to-drain capacitance, giving excellent performance under high-frequency operations.

The insertion of an isolator also prevents the gate current from arriving at the drain and substrate, which is beneficial for the drain-substrate non-reciprocity characteristic of any metal-composite channel devices. The gate-substrate voltage decline, in response to the input gate voltage, is reduced, allowing the gate to maintain its full control of the drain-substrate characteristics. The arrangement of metal-composite channels further allows for a wide range of current and/or voltage gain and in excess of 15 milliohm\'s transconductance. The low parasitic capacitance between the gate, drain, and substrate also allows for superior transient performance.

In short, the MCCD2007-TP offers a highly advanced FET array based on the metal-composite channel depletion (MCD) mode. It provides an attractive solution for power and logic applications due to its low power consumption, low voltage operation, high mobility, and high speed switching. The combination of the metal-composite channels and isolator also gives it excellent transconductance, voltage and current gain, as well as superior transient performance.

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