| Allicdata Part #: | MCP1405T-E/SO-ND |
| Manufacturer Part#: |
MCP1405T-E/SO |
| Price: | $ 0.99 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Microchip Technology |
| Short Description: | IC MOSFET DVR 4.5A DUAL 16SOIC |
| More Detail: | Low-Side Gate Driver IC Inverting, Non-Inverting 1... |
| DataSheet: | MCP1405T-E/SO Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 0.90198 |
Specifications
| Logic Voltage - VIL, VIH: | 0.8V, 2.4V |
| Base Part Number: | MCP1405 |
| Supplier Device Package: | 16-SOIC |
| Package / Case: | 16-SOIC (0.295", 7.50mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Rise / Fall Time (Typ): | 15ns, 18ns |
| Input Type: | Inverting, Non-Inverting |
| Current - Peak Output (Source, Sink): | 4.5A, 4.5A |
| Series: | -- |
| Voltage - Supply: | 4.5 V ~ 18 V |
| Gate Type: | IGBT, N-Channel, P-Channel MOSFET |
| Number of Drivers: | 2 |
| Channel Type: | Independent |
| Driven Configuration: | Low-Side |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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MCP1405T-E/SO is a type of PMIC offering gate drivers. It can be used for general-purpose I/O for a variety of applications and an ideal choice for automotive and industrial applications requiring edge-rate control and high-speed switching. The device is based on the P-channel MOSFET technology reducing power loss and device size while offering low operating voltage and low RDS(on) value. This device can provide high output currents, high-speed switching and excellent output edge rates to reduce electromagnetic interference. With its low power consumption, long life under high temperature, and smaller size, the MCP1405T-E/SO can be used in applications ranging from automotive displays and cellular devices to industrial control.The working principle behind the MCP1405T-E/SO is based on the MOS field-effect transistor (MOSFET). A MOSFET consists of a metal oxide and two levels of silicon, with the first layer of silicon forming the gate electrode. When voltage is applied to the gate, it attracts carriers such as electrons and changes the conductivity of the channel between the two levels of silicon. This allows current to flow from the source to the drain, allowing the MOSFET to be used as a switch.The MCP1405T-E/SO is designed with both P-channel and N-channel MOSFETs, allowing it to supply both positive and negative currents to the gate. The device also comes equipped with a high-side driver and a low-side driver. The high-side driver is used to control the high-side transistor (source connected to VCC) and the low-side driver is used to control the low-side transistor (source connected to GND). By controlling these transistors, the load current can be controlled and the output voltage can be set.The MCP1405T-E/SO can also be used as a level shifter by using the RC network. It provides the ability to shift the voltage levels of the input signal to the desired output voltage. To do so, a resistor is connected between the gate and the source of the transistor and a capacitor is connected across the resistor. When a signal is input to the gate, the capacitor and resistor form an RC network that allows the voltage to shift to the desired level.In addition, the MCP1405T-E/SO is also equipped with an LED driver that can be used as an indicator or monitor. The LED driver features low-power consumption and wide operating voltage. It comes with three CMOS outputs that are controlled by an external resistor and allows the LED to be dimmed to the desired brightness.The MCP1405T-E/SO has many features and capabilities making it an excellent choice for a variety of applications. With its low-power consumption and low operating voltage, compact size and long life in high temperatures, the device is ideal for a wide range of applications including automotive displays and cellular devices, and industrial control and automotive applications.The specific data is subject to PDF, and the above content is for reference
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MCP1405T-E/SO Datasheet/PDF