MCR716T4 Allicdata Electronics

MCR716T4 Discrete Semiconductor Products

Allicdata Part #:

MCR716T4OSCT-ND

Manufacturer Part#:

MCR716T4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: THYRISTOR SCR 4A 400V DPAK
More Detail: SCR 400V 4A Sensitive Gate Surface Mount DPAK
DataSheet: MCR716T4 datasheetMCR716T4 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Hold (Ih) (Max): 5mA
Base Part Number: MCR716
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
SCR Type: Sensitive Gate
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A @ 60Hz
Current - Off State (Max): 10µA
Series: --
Current - On State (It (RMS)) (Max): 4A
Current - On State (It (AV)) (Max): 2.6A
Voltage - On State (Vtm) (Max): 2.2V
Current - Gate Trigger (Igt) (Max): 75µA
Voltage - Gate Trigger (Vgt) (Max): 800mV
Voltage - Off State: 400V
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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Thyristors – SCRs (silicon controlled rectifier) are used as switching devices since they have no gate signal need to turn them on. As a three-terminal semiconductor device, they are classified under the category of controlled rectifier, and represent a relatively simple form of power control. Generally, voltage and current levels should be accepted for the anode, cathode and gate-terminal operation.

The MCR716T4 is a SCR which offers a blocking of 600 volts with a fast switching speed and low thermal resistance. This SCR provides monolithic integration and more enhanced performance than the traditional thyristor rectifier. The device has two main applications and two main working principles.

Application Field: The MCR716T4 is typically used as a general purpose switch in an industrial control system and as an on/off switch in an AC/DC power control. The blocking voltage of 600 Volts of this SCR allows it to be applied over a wide range of power supplies and the low on-state and reverse leakage currents eliminate all problems as far as current drain, power dissipation, and temperature rise are concerned.

Working Principle: The MCR716T4 SCR is based on the basic scratch-off, or step-off gate principle, in which full conduction of the thyristor is triggered when the voltage across it reaches the trigger voltage (VGT). In order to achieve switching and full conduction of the thyristor, a gate pulse needs to be applied to its gate terminal, driving the voltage across the SCR device to the voltage needed to trigger the device.

This SCR is also based on the principle of negative feedback control. This means that the gate control signal or the current flows in the opposite direction of the main current flow in the SCR, hence reducing or eliminating the terminal voltage drop, resulting in high power efficiency of this device. In this way, the gate can adjust the SCR voltage, thereby controlling the conduction of the device and also the current flow.

When it comes to other operating characteristics, the MCR716T4 SCR device has great switching and capability of carrying high current, low reverse leakage currents and high on-state voltage. Other favorable parameters of this device include its low input capacitance and great immunity to power cycling and surge voltage.

Apart from predicting the performance, it is also essential to note that MCR716T4 SCR is vulnerable to damage caused by an AC or DC misapplication or destructive switching transients. Therefore, when using this device in an industrial control system, a snubber circuit should be included between the SCR and its switching contact. This allows smooth switching transition while protecting the SCR from any kind of misapplication.

The MCR716T4 SCR device is one of the most widely used devices in power controls due to their numerous advantages and working principles. With its 600 Volt blocking voltage, low thermal resistance and a fast switching speed, this device is suitable for a wide range of applications. Furthermore, this device offers monolithic integration, great immunity to power cycling, and surge voltages, as well as low input capacitance to provide an enhanced performance.

The specific data is subject to PDF, and the above content is for reference

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