MIC5020BM-TR

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The MIC5020BM-TR is a high-current, low-loss monolithic gate driver IC that provides a rugged, fast and robust way for driving power MOSFETs or IGBTs. It represents a reliable and efficient solution for bipolar, FETs and IGBTs; especially in high-temperature and torque, high-frequency applications. Typically, devices are used to drive power transistors in motor drive, digital power, motor control systems and in energy storage applications.

The MIC5020BM-TR is a PMIC (Power Management IC), essentially consisting of a PWM gate control circuitry and an internal low-resistance power MOSFET array designed to drive high-side and low-side power MOSFETs, IGBTs and other power transistors with current flowing in either direction. It is designed to be used in a wide range of motor control and energy management applications requiring an easier and more efficient solution for driving power transistors and ensuring superior performance, compared with other solutions currently available on the market.

The MIC5020BM-TR improves MOSFET or IGBT control performance at low and high frequency switching and for high-temperature applications. It delivers high frequency, low-loss MOSFET/IGBT gate control, excellent inherent thermal coupling between the MOSFET and IGBT gate drive nodes and can be used together with a wide range of input voltages. Moreover, it reduces switching losses and improves system efficiency.

The MIC5020BM-TR is designed to provide fast, direct-drive high-side and low-side high current gate drive of power MOSFETs or IGBTs. It is internally composed of one high-side and one low-side gate driver which can be operated independently to provide forward, reverse, or bi-directional control. The MIC5020BM-TR features a wide input bandwidth of 15kHz to over 1MHz and can operate with a wide voltage range of 3V to 15V. In addition, it also supports PWM dead-time control, where the on and off times can be precisely set.

The MIC5020BM-TR gate driver IC is implemented with low-loss low-side gate drivers and high-side gate drivers capable of providing up to 12A of peak load current. The low-side gate drivers are capable of operating at temperatures up to 150°C and the high-side gate drivers can operate up to 160°C Junction Temperature. Additionally, it provides over-temperature protection at 180°C to maintain safety and protect from damage due to high current charging.

The MIC5020BM-TR is also engineered to provide true immune-level gate turn on and turn off times with excellent transient immunity, allowing for reliable switching behavior even when the gate voltage is subjected to transient events. It is internally protected against all types of gate resistor and gate lead induction, as well as cable length effects, and thus allows for reduced system complexity, improved speed and efficiency, and greater system reliability.

In conclusion, the MIC5020BM-TR is an efficient, rugged and reliable gate driver solution designed for driving power transistors in motor drive, digital power, motor control systems and energy storage applications. It offers superior performance in terms of fast switching, a wide operating temperature range and peak current of up to 12A. Moreover, it improves system efficiency by reducing switching losses and providing immunity against transient events. These features make the MIC5020BM-TR ideal for use in a variety of power management applications.

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