MJ15001

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MJ15001 is designed to provide high performance, ruggedness and fast switching characteristics for applications that require single bipolar transistors. The device is used in a wide range of applications, including audio amplifiers, switching power supplies, vehicle electronics and EMC suspensions.

The MJ15001 is a single discrete power bipolar transistor. It features a low saturation voltage of 0.3 V, a maximum collector current of 2.5 A and a collector-emitter voltage rating of 50 V. It is well-suited for audio, radio frequency (RF), and telecommunication amplifiers.

The device is characterized by low reverse-recovery time, low capacitance and high open-collector current. It has a high level of linearity and low output capacitance for improved reliability. The bipolar device is available in denominations of 1A and 2.5A.

The MJ15001 works on the principle of four fixed base current injection. This principle enables a highly efficient operation of the device and enables better control over the breakdown voltage. The fixed base current injection is controlled by the base-emitter voltage.

The MJ15001 offers fast switching times, accurate operation and reliable dielectric strength. The device is designed to provide a high switching speed and low capacitance, allowing for a high degree of control over the current flow. The maximum operating temperature of the device is up to 150°C.

The device has built-in temperature-sensing protection. This protection feature prevents the device from becoming damaged in the event of an excessive temperature increase or a short rise in the temperature. It is also designed for accurate and reliable shutdown of the device in the event of an overload.

The MJ15001 is a high-performance device and has been designed for use in a variety of applications, such as audio amplifiers, switching power supplies, telecommunication and consumer electronics. It is also suitable for high-frequency applications, as it offers low transit time, fast turn-on and extremely low collector-emitter charge.

The device is constructed using a three-layer construction technology, which ensures low collector-emitter saturation and leakage. The device is provided in a single-in-line-package (SIP) or DIP dual-in-line package, and it has an integrated heat sink for better thermal management. The device is also suitable for use in surface mount and through-hole mounting.

The MJ15001 provides a high level of reliability and performance, and is a perfect choice for applications that require single bipolar transistors. It offers a fast switching time and a low leakage current, making it ideal for a range of applications. It also provides a high level of accuracy and reliability, and is designed to provide robust operation and long life in applications that require single bipolar transistors.

The specific data is subject to PDF, and the above content is for reference