
Allicdata Part #: | MJ15003GOS-ND |
Manufacturer Part#: |
MJ15003G |
Price: | $ 3.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 140V 20A TO3 |
More Detail: | Bipolar (BJT) Transistor NPN 140V 20A 2MHz 250W Th... |
DataSheet: | ![]() |
Quantity: | 1381 |
1 +: | $ 3.06000 |
10 +: | $ 2.96820 |
100 +: | $ 2.90700 |
1000 +: | $ 2.84580 |
10000 +: | $ 2.75400 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 20A |
Voltage - Collector Emitter Breakdown (Max): | 140V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 500mA, 5A |
Current - Collector Cutoff (Max): | 250µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 5A, 2V |
Power - Max: | 250W |
Frequency - Transition: | 2MHz |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-204 (TO-3) |
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The MJ15003G is a high power NPN transistor designed for use in power switching applications such as automotive, motor control and inverter circuits. This transistor is capable of a high current gain, making it well suited for use in higher power applications. The main characteristic of this transistor is its ability to switch high power at a very fast rate, making it an ideal choice for applications such as high speed IGBT switching.
The transistor consists of a multilayer semiconductor substrate, typically fabricated using silicon or other semiconductor material. The layers of the substrate are each made up of P-type and N-type dopants and each layer is connected to a different electrical contact. The contacts form the base, collector and emitter of the transistor, allowing current to flow from one contact to another as the transistor is switched on.
The transistor works by changing the current flow between the base and the collector, with the emitter connected to the ground. When current flows through the base contact, it causes the transistor to conduct electricity from the collector contact to the emitter, allowing current to flow through the circuit. This process is known as bipolar junction transistor, or BJT, and allows the transistor to switch large amounts of electrical current. The current gain is determined by the ratio of collector current to base current, allowing for more powerful switching.
The MJ15003G is also a great choice for applications that require high efficiency, as it can switch current at very fast frequencies. This allows the transistor to switch power at very low voltages and consume relatively low amounts of power compared to other power switching transistors. The transistor is also designed for a very wide operating temperature range, making it an ideal choice for applications that must operate in extreme temperatures.
Overall, the MJ15003G is an excellent choice for a variety of power switching applications and can provide high power switching at very fast rates. With its high current gain and high efficiency, the MJ15003G offers a wide range of possibilities for those who need a fast and powerful switching solution.
The specific data is subject to PDF, and the above content is for reference
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MJ1582FE-R52 | Ohmite | 0.01 $ | 1000 | RES 15.8K OHM 1/8W 1% AXI... |
MJ15R4FE-R52 | Ohmite | 0.01 $ | 1000 | RES 15.4 OHM 1/8W 1% AXIA... |
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